3D resistive RAM cell design for high-density storage class memory—a review

Boris Hudec; Chung Wei Hsu; I. Ting Wang; Wei Li Lai; Che Chia Chang; Taifang Wang; Karol Fröhlich; Chia Hua Ho; Chen Hsi Lin; Tuo-Hung Hou

doi:10.1007/s11432-016-5566-0

3D resistive RAM cell design for high-density storage class memory—a review

Boris Hudec^*, Chung Wei Hsu, I. Ting Wang, Wei Li Lai, Che Chia Chang, Taifang Wang, Karol Fröhlich, Chia Hua Ho, Chen Hsi Lin, Tuo-Hung Hou

^*Corresponding author for this work

Research output: Contribution to journal › Review article › peer-review

51 Scopus citations

Abstract

In this article, we comprehensively review recent progress in the ReRAM cell technology for 3D integration focusing on a material/device level. First we briefly mention pioneering work on high-density crossbar ReRAM arrays which paved the way to 3D integration. We discuss the two main proposed 3D integration schemes—3D horizontally stacked ReRAM vs 3D Vertical ReRAM and their respective advantages and disadvantages. We follow with the detailed memory cell design on important work in both areas, utilizing either filamentary or interface-limited switching mechanisms. We also discuss our own contributions on HfO₂-based filamentary 3D Vertical ReRAM as well as TaO_x/TiO₂ bilayer-based self-rectifying 3D Vertical ReRAM. Finally, we summarize the present status and provide an outlook for the nearterm future.

Original language	English
Article number	061403
Number of pages	21
Journal	Science China Information Sciences
Volume	59
Issue number	6
DOIs	https://doi.org/10.1007/s11432-016-5566-0
State	Published - 1 Jun 2016

Keywords

3D integration
RRAM
ReRAM
atomic layer deposition
cross-point
crossbar
resistive switching
selector
storage class memory

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10.1007/s11432-016-5566-0

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title = "3D resistive RAM cell design for high-density storage class memory—a review",

abstract = "In this article, we comprehensively review recent progress in the ReRAM cell technology for 3D integration focusing on a material/device level. First we briefly mention pioneering work on high-density crossbar ReRAM arrays which paved the way to 3D integration. We discuss the two main proposed 3D integration schemes—3D horizontally stacked ReRAM vs 3D Vertical ReRAM and their respective advantages and disadvantages. We follow with the detailed memory cell design on important work in both areas, utilizing either filamentary or interface-limited switching mechanisms. We also discuss our own contributions on HfO2-based filamentary 3D Vertical ReRAM as well as TaOx/TiO2 bilayer-based self-rectifying 3D Vertical ReRAM. Finally, we summarize the present status and provide an outlook for the nearterm future.",

keywords = "3D integration, RRAM, ReRAM, atomic layer deposition, cross-point, crossbar, resistive switching, selector, storage class memory",

author = "Boris Hudec and Hsu, {Chung Wei} and Wang, {I. Ting} and Lai, {Wei Li} and Chang, {Che Chia} and Taifang Wang and Karol Fr{\"o}hlich and Ho, {Chia Hua} and Lin, {Chen Hsi} and Tuo-Hung Hou",

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doi = "10.1007/s11432-016-5566-0",

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AU - Hudec, Boris

AU - Hsu, Chung Wei

AU - Wang, I. Ting

AU - Lai, Wei Li

AU - Chang, Che Chia

AU - Wang, Taifang

AU - Fröhlich, Karol

AU - Ho, Chia Hua

AU - Lin, Chen Hsi

AU - Hou, Tuo-Hung

PY - 2016/6/1

Y1 - 2016/6/1

N2 - In this article, we comprehensively review recent progress in the ReRAM cell technology for 3D integration focusing on a material/device level. First we briefly mention pioneering work on high-density crossbar ReRAM arrays which paved the way to 3D integration. We discuss the two main proposed 3D integration schemes—3D horizontally stacked ReRAM vs 3D Vertical ReRAM and their respective advantages and disadvantages. We follow with the detailed memory cell design on important work in both areas, utilizing either filamentary or interface-limited switching mechanisms. We also discuss our own contributions on HfO2-based filamentary 3D Vertical ReRAM as well as TaOx/TiO2 bilayer-based self-rectifying 3D Vertical ReRAM. Finally, we summarize the present status and provide an outlook for the nearterm future.

AB - In this article, we comprehensively review recent progress in the ReRAM cell technology for 3D integration focusing on a material/device level. First we briefly mention pioneering work on high-density crossbar ReRAM arrays which paved the way to 3D integration. We discuss the two main proposed 3D integration schemes—3D horizontally stacked ReRAM vs 3D Vertical ReRAM and their respective advantages and disadvantages. We follow with the detailed memory cell design on important work in both areas, utilizing either filamentary or interface-limited switching mechanisms. We also discuss our own contributions on HfO2-based filamentary 3D Vertical ReRAM as well as TaOx/TiO2 bilayer-based self-rectifying 3D Vertical ReRAM. Finally, we summarize the present status and provide an outlook for the nearterm future.

KW - 3D integration

KW - RRAM

KW - ReRAM

KW - atomic layer deposition

KW - cross-point

KW - crossbar

KW - resistive switching

KW - selector

KW - storage class memory

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DO - 10.1007/s11432-016-5566-0

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VL - 59

JO - Science China Information Sciences

JF - Science China Information Sciences

IS - 6

M1 - 061403

ER -

3D resistive RAM cell design for high-density storage class memory—a review

Abstract

Keywords

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