3D resistive RAM cell design for high-density storage class memory—a review

Boris Hudec*, Chung Wei Hsu, I. Ting Wang, Wei Li Lai, Che Chia Chang, Taifang Wang, Karol Fröhlich, Chia Hua Ho, Chen Hsi Lin, Tuo-Hung Hou

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

51 Scopus citations


In this article, we comprehensively review recent progress in the ReRAM cell technology for 3D integration focusing on a material/device level. First we briefly mention pioneering work on high-density crossbar ReRAM arrays which paved the way to 3D integration. We discuss the two main proposed 3D integration schemes—3D horizontally stacked ReRAM vs 3D Vertical ReRAM and their respective advantages and disadvantages. We follow with the detailed memory cell design on important work in both areas, utilizing either filamentary or interface-limited switching mechanisms. We also discuss our own contributions on HfO2-based filamentary 3D Vertical ReRAM as well as TaOx/TiO2 bilayer-based self-rectifying 3D Vertical ReRAM. Finally, we summarize the present status and provide an outlook for the nearterm future.

Original languageEnglish
Article number061403
Number of pages21
JournalScience China Information Sciences
Issue number6
StatePublished - 1 Jun 2016


  • 3D integration
  • RRAM
  • ReRAM
  • atomic layer deposition
  • cross-point
  • crossbar
  • resistive switching
  • selector
  • storage class memory


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