3D device simulation of work function and interface trap fluctuations on high-κ / metal gate devices

Hui Wen Cheng; Fu Hai Li; Ming Hung Han; Chun Yen Yiu; Chia Hui Yu; Kuo Fu Lee; Yiming Li

doi:10.1109/IEDM.2010.5703370

3D device simulation of work function and interface trap fluctuations on high-κ / metal gate devices

Hui Wen Cheng^*, Fu Hai Li, Ming Hung Han, Chun Yen Yiu, Chia Hui Yu, Kuo Fu Lee, Yiming Li

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

40 Scopus citations

Abstract

This work, for the first time, examines the work function fluctuation (WKF) and interface trap fluctuation (ITF) using experimentally calibrated 3D device simulation on high-κ / metal gate technology. The random WKs result in 36.7 mV threshold voltage fluctuation (σV_th) for 16 nm N-MOSFETs with TiN gate, which is rather different from the result of averaged WKF (AWKF) method [1] due to localized random WK effect. The ITF affects the subthreshold region (the normalized σI_D > 48%) and is suppressed for devices under strong inversion. Estimation of statistical covariance confirms the dependence of IT on the metal gate's WK; thus, the impacts of WKF and ITF on device and circuit variability should be considered together properly. Such variability induced static noise margin fluctuation of SRAM exceeds the influence of random dopants and cannot be ignored.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	15.6.1-15.6.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703370
State	Published - 2010
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: 6 Dec 2010 → 8 Dec 2010

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	6/12/10 → 8/12/10

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10.1109/IEDM.2010.5703370

Cite this

Cheng, H. W., Li, F. H., Han, M. H., Yiu, C. Y., Yu, C. H., Lee, K. F., & Li, Y. (2010). 3D device simulation of work function and interface trap fluctuations on high-κ / metal gate devices. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 15.6.1-15.6.4). Article 5703370 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703370

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title = "3D device simulation of work function and interface trap fluctuations on high-κ / metal gate devices",

abstract = "This work, for the first time, examines the work function fluctuation (WKF) and interface trap fluctuation (ITF) using experimentally calibrated 3D device simulation on high-κ / metal gate technology. The random WKs result in 36.7 mV threshold voltage fluctuation (σVth) for 16 nm N-MOSFETs with TiN gate, which is rather different from the result of averaged WKF (AWKF) method [1] due to localized random WK effect. The ITF affects the subthreshold region (the normalized σID > 48%) and is suppressed for devices under strong inversion. Estimation of statistical covariance confirms the dependence of IT on the metal gate's WK; thus, the impacts of WKF and ITF on device and circuit variability should be considered together properly. Such variability induced static noise margin fluctuation of SRAM exceeds the influence of random dopants and cannot be ignored.",

author = "Cheng, {Hui Wen} and Li, {Fu Hai} and Han, {Ming Hung} and Yiu, {Chun Yen} and Yu, {Chia Hui} and Lee, {Kuo Fu} and Yiming Li",

year = "2010",

doi = "10.1109/IEDM.2010.5703370",

language = "English",

isbn = "9781424474196",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "15.6.1--15.6.4",

booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",

note = "2010 IEEE International Electron Devices Meeting, IEDM 2010 ; Conference date: 06-12-2010 Through 08-12-2010",

}

Cheng, HW, Li, FH, Han, MH, Yiu, CY, Yu, CH, Lee, KF & Li, Y 2010, 3D device simulation of work function and interface trap fluctuations on high-κ / metal gate devices. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703370, Technical Digest - International Electron Devices Meeting, IEDM, pp. 15.6.1-15.6.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 6/12/10. https://doi.org/10.1109/IEDM.2010.5703370

3D device simulation of work function and interface trap fluctuations on high-κ / metal gate devices. / Cheng, Hui Wen; Li, Fu Hai; Han, Ming Hung et al.
2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 15.6.1-15.6.4 5703370 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - 3D device simulation of work function and interface trap fluctuations on high-κ / metal gate devices

AU - Cheng, Hui Wen

AU - Li, Fu Hai

AU - Han, Ming Hung

AU - Yiu, Chun Yen

AU - Yu, Chia Hui

AU - Lee, Kuo Fu

AU - Li, Yiming

PY - 2010

Y1 - 2010

N2 - This work, for the first time, examines the work function fluctuation (WKF) and interface trap fluctuation (ITF) using experimentally calibrated 3D device simulation on high-κ / metal gate technology. The random WKs result in 36.7 mV threshold voltage fluctuation (σVth) for 16 nm N-MOSFETs with TiN gate, which is rather different from the result of averaged WKF (AWKF) method [1] due to localized random WK effect. The ITF affects the subthreshold region (the normalized σID > 48%) and is suppressed for devices under strong inversion. Estimation of statistical covariance confirms the dependence of IT on the metal gate's WK; thus, the impacts of WKF and ITF on device and circuit variability should be considered together properly. Such variability induced static noise margin fluctuation of SRAM exceeds the influence of random dopants and cannot be ignored.

AB - This work, for the first time, examines the work function fluctuation (WKF) and interface trap fluctuation (ITF) using experimentally calibrated 3D device simulation on high-κ / metal gate technology. The random WKs result in 36.7 mV threshold voltage fluctuation (σVth) for 16 nm N-MOSFETs with TiN gate, which is rather different from the result of averaged WKF (AWKF) method [1] due to localized random WK effect. The ITF affects the subthreshold region (the normalized σID > 48%) and is suppressed for devices under strong inversion. Estimation of statistical covariance confirms the dependence of IT on the metal gate's WK; thus, the impacts of WKF and ITF on device and circuit variability should be considered together properly. Such variability induced static noise margin fluctuation of SRAM exceeds the influence of random dopants and cannot be ignored.

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U2 - 10.1109/IEDM.2010.5703370

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M3 - Conference contribution

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SN - 9781424474196

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 15.6.1-15.6.4

BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010

T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010

Y2 - 6 December 2010 through 8 December 2010

ER -

3D device simulation of work function and interface trap fluctuations on high-κ / metal gate devices

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