32-nm multigate Si-nTFET with microwave-annealed abrupt junction

Fu Ju Hou; Po Jung Sung; Fu Kuo Hsueh; Chien Ting Wu; Yao Jen Lee; Mao Nang Chang; Yi-Ming Li; Tuo-Hung Hou

doi:10.1109/TED.2015.2466236

32-nm multigate Si-nTFET with microwave-annealed abrupt junction

Fu Ju Hou, Po Jung Sung, Fu Kuo Hsueh, Chien Ting Wu, Yao Jen Lee, Mao Nang Chang, Yi-Ming Li, Tuo-Hung Hou

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Microwave annealing (MWA) activates dopants through solid-phase epitaxial regrowth with low thermal budget. Optimizing the microwave power during MWA is capable of realizing low defect density at the junction, suppressing the dopant diffusion, and mitigating the straggle effect of ion implantation. These favorable features of MWA facilitate the formation of extremely abrupt junction profiles in tunnel FETs (TFETs). In conjunction with the improved gate-to-channel controllability of the multiple-gate (MG) structure, we demonstrate high-performance lateral n-type Si-TFETs using a CMOS-compatible process flow with excellent band-to-band tunneling efficiency and device scalability. The 32-nm MG Si-TFET shows promising characteristics, including a high ON-state current of 41.3 μ A/μm , a large current ON/OFF ratio of > 5× 10⁷, and minimal short-channel effect using V_G=2 V and V_D=1 V.

Original language	English
Article number	7225121
Pages (from-to)	1808-1813
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	5
DOIs	https://doi.org/10.1109/TED.2015.2466236
State	Published - 1 May 2016

Keywords

Microwave annealing (MWA)
solid-phase epitaxial regrowth (SPER)
tunnel FET (TFET).

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10.1109/TED.2015.2466236

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title = "32-nm multigate Si-nTFET with microwave-annealed abrupt junction",

abstract = "Microwave annealing (MWA) activates dopants through solid-phase epitaxial regrowth with low thermal budget. Optimizing the microwave power during MWA is capable of realizing low defect density at the junction, suppressing the dopant diffusion, and mitigating the straggle effect of ion implantation. These favorable features of MWA facilitate the formation of extremely abrupt junction profiles in tunnel FETs (TFETs). In conjunction with the improved gate-to-channel controllability of the multiple-gate (MG) structure, we demonstrate high-performance lateral n-type Si-TFETs using a CMOS-compatible process flow with excellent band-to-band tunneling efficiency and device scalability. The 32-nm MG Si-TFET shows promising characteristics, including a high ON-state current of 41.3 μ A/μm , a large current ON/OFF ratio of > 5× 107, and minimal short-channel effect using VG=2 V and VD=1 V.",

keywords = "Microwave annealing (MWA), solid-phase epitaxial regrowth (SPER), tunnel FET (TFET).",

author = "Hou, {Fu Ju} and Sung, {Po Jung} and Hsueh, {Fu Kuo} and Wu, {Chien Ting} and Lee, {Yao Jen} and Chang, {Mao Nang} and Yi-Ming Li and Tuo-Hung Hou",

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doi = "10.1109/TED.2015.2466236",

language = "English",

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T1 - 32-nm multigate Si-nTFET with microwave-annealed abrupt junction

AU - Hou, Fu Ju

AU - Sung, Po Jung

AU - Hsueh, Fu Kuo

AU - Wu, Chien Ting

AU - Lee, Yao Jen

AU - Chang, Mao Nang

AU - Li, Yi-Ming

AU - Hou, Tuo-Hung

PY - 2016/5/1

Y1 - 2016/5/1

N2 - Microwave annealing (MWA) activates dopants through solid-phase epitaxial regrowth with low thermal budget. Optimizing the microwave power during MWA is capable of realizing low defect density at the junction, suppressing the dopant diffusion, and mitigating the straggle effect of ion implantation. These favorable features of MWA facilitate the formation of extremely abrupt junction profiles in tunnel FETs (TFETs). In conjunction with the improved gate-to-channel controllability of the multiple-gate (MG) structure, we demonstrate high-performance lateral n-type Si-TFETs using a CMOS-compatible process flow with excellent band-to-band tunneling efficiency and device scalability. The 32-nm MG Si-TFET shows promising characteristics, including a high ON-state current of 41.3 μ A/μm , a large current ON/OFF ratio of > 5× 107, and minimal short-channel effect using VG=2 V and VD=1 V.

AB - Microwave annealing (MWA) activates dopants through solid-phase epitaxial regrowth with low thermal budget. Optimizing the microwave power during MWA is capable of realizing low defect density at the junction, suppressing the dopant diffusion, and mitigating the straggle effect of ion implantation. These favorable features of MWA facilitate the formation of extremely abrupt junction profiles in tunnel FETs (TFETs). In conjunction with the improved gate-to-channel controllability of the multiple-gate (MG) structure, we demonstrate high-performance lateral n-type Si-TFETs using a CMOS-compatible process flow with excellent band-to-band tunneling efficiency and device scalability. The 32-nm MG Si-TFET shows promising characteristics, including a high ON-state current of 41.3 μ A/μm , a large current ON/OFF ratio of > 5× 107, and minimal short-channel effect using VG=2 V and VD=1 V.

KW - Microwave annealing (MWA)

KW - solid-phase epitaxial regrowth (SPER)

KW - tunnel FET (TFET).

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U2 - 10.1109/TED.2015.2466236

DO - 10.1109/TED.2015.2466236

M3 - Article

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SN - 0018-9383

VL - 63

SP - 1808

EP - 1813

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

M1 - 7225121

ER -

32-nm multigate Si-nTFET with microwave-annealed abrupt junction

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Keywords

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