30-GHz low-noise performance of 100-nm-gate-recessed n-GaN/AlGaN/GaN HEMTs

Chia Ta Chang*, Heng-Tung Hsu, Edward Yi Chang, Chien I. Kuo, Jui Chien Huang, Chung Yu Lu, Yasuyuki Miyamoto

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


We demonstrate a 100-nm-gate-recessed n-GaN/AlGaN/GaN high-electron mobility transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a low ohmic-contact resistance of 0.28 Ω mm and a low gate leakage current of 0.9 μA/mm when biased at VGS=-3 V and V DS = 10 V. At the same bias point, a minimum noise figure of 1.6 dB at 30 GHz and an associated gain of 5 dB were achieved. To the best of our knowledge, this is the best noise performance reported at 30 GHz for gate-recessed AlGaN/GaN HEMTs.

Original languageEnglish
Article number5357371
Pages (from-to)105-107
Number of pages3
JournalIEEE Electron Device Letters
Issue number2
StatePublished - 1 Feb 2010


  • AlGaN/GaN
  • High-electron mobility transistor (HEMT)
  • Noise figure
  • Recessed gate


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