Original language | English |
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Pages (from-to) | 530-532 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 9 |
Issue number | 10 |
DOIs | |
State | Published - 1 Jan 1988 |
3-mm Double-Heterojunction Microwave Power HEMT Fabricated by Selective RIE
R. M. Nagarajan, Krishna P. Pande, J. M. van Hove, Robert J. Schuelke, G. P. Thomes, J. D. Jorgenson, Edward Yi Chang
Research output: Contribution to journal › Article › peer-review
4
Scopus
citations