2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without gate-oxide reliability issue

Ming-Dou Ker; Tzu Ming Wang; Hung Tai Liao

doi:10.1109/ISCAS.2008.4541544

2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without gate-oxide reliability issue

Ming-Dou Ker^*, Tzu Ming Wang, Hung Tai Liao

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

A new 2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without suffering gate-oxide reliability issue is proposed, which is one of the key mixed-voltage I/O cells in a cell library. The proposed circuit is realized with only thin gate-oxide devices with floating n-well technique. The proposed 2xVDD-tolerant crystal oscillator circuit has been designed and verified in a 90-nm 1-V CMOS process to serve 1/2-V mixed-voltage interface applications.

Original language	English
Title of host publication	2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
Pages	820-823
Number of pages	4
DOIs	https://doi.org/10.1109/ISCAS.2008.4541544
State	Published - 19 Sep 2008
Event	2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008 - Seattle, WA, United States Duration: 18 May 2008 → 21 May 2008

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)	0271-4310

Conference

Conference	2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008
Country/Territory	United States
City	Seattle, WA
Period	18/05/08 → 21/05/08

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10.1109/ISCAS.2008.4541544

Cite this

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title = "2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without gate-oxide reliability issue",

abstract = "A new 2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without suffering gate-oxide reliability issue is proposed, which is one of the key mixed-voltage I/O cells in a cell library. The proposed circuit is realized with only thin gate-oxide devices with floating n-well technique. The proposed 2xVDD-tolerant crystal oscillator circuit has been designed and verified in a 90-nm 1-V CMOS process to serve 1/2-V mixed-voltage interface applications.",

author = "Ming-Dou Ker and Wang, {Tzu Ming} and Liao, {Hung Tai}",

year = "2008",

month = sep,

day = "19",

doi = "10.1109/ISCAS.2008.4541544",

language = "English",

isbn = "9781424416844",

series = "Proceedings - IEEE International Symposium on Circuits and Systems",

pages = "820--823",

booktitle = "2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008",

note = "2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008 ; Conference date: 18-05-2008 Through 21-05-2008",

}

Ker, M-D, Wang, TM & Liao, HT 2008, 2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without gate-oxide reliability issue. in 2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008., 4541544, Proceedings - IEEE International Symposium on Circuits and Systems, pp. 820-823, 2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008, Seattle, WA, United States, 18/05/08. https://doi.org/10.1109/ISCAS.2008.4541544

2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without gate-oxide reliability issue. / Ker, Ming-Dou; Wang, Tzu Ming; Liao, Hung Tai.
2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008. 2008. p. 820-823 4541544 (Proceedings - IEEE International Symposium on Circuits and Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Ker, Ming-Dou

AU - Wang, Tzu Ming

AU - Liao, Hung Tai

PY - 2008/9/19

Y1 - 2008/9/19

N2 - A new 2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without suffering gate-oxide reliability issue is proposed, which is one of the key mixed-voltage I/O cells in a cell library. The proposed circuit is realized with only thin gate-oxide devices with floating n-well technique. The proposed 2xVDD-tolerant crystal oscillator circuit has been designed and verified in a 90-nm 1-V CMOS process to serve 1/2-V mixed-voltage interface applications.

AB - A new 2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without suffering gate-oxide reliability issue is proposed, which is one of the key mixed-voltage I/O cells in a cell library. The proposed circuit is realized with only thin gate-oxide devices with floating n-well technique. The proposed 2xVDD-tolerant crystal oscillator circuit has been designed and verified in a 90-nm 1-V CMOS process to serve 1/2-V mixed-voltage interface applications.

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U2 - 10.1109/ISCAS.2008.4541544

DO - 10.1109/ISCAS.2008.4541544

M3 - Conference contribution

AN - SCOPUS:51749101718

SN - 9781424416844

T3 - Proceedings - IEEE International Symposium on Circuits and Systems

SP - 820

EP - 823

BT - 2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008

T2 - 2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008

Y2 - 18 May 2008 through 21 May 2008

ER -

2xVDD-tolerant crystal oscillator circuit realized with 1xVDD CMOS devices without gate-oxide reliability issue

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