2Gs/s HBT sample and hold

Ken Poulton; James S. Kang; John J. Corcoran; Keh Chung Wang; Peter M. Asbeck; Mau-Chung Chang; Gerard Sullivan

doi:10.1109/GAAS.1988.11057

2Gs/s HBT sample and hold

Ken Poulton^*, James S. Kang, John J. Corcoran, Keh Chung Wang, Peter M. Asbeck, Mau-Chung Chang, Gerard Sullivan

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

13 Scopus citations

Abstract

The authors describe a Schottky-diode sample-and-hold (S/H) circuit fabricated in an AlGaAs/GaAs heterojunction bipolar transistor (HBT) process. The transistors exhibit an f_T of over 50 GHz. The S/H circuit operates at up to 2G samples/s, with distortion below-40 dBc up to and beyond the Nyquist input frequency of 1 GHz.

Original language	English
Pages	199-202
Number of pages	4
DOIs	https://doi.org/10.1109/GAAS.1988.11057
State	Published - 1 Dec 1988

Access to Document

10.1109/GAAS.1988.11057

Cite this

@conference{fdcb40f30bf54d55b68f9d82b3617529,

title = "2Gs/s HBT sample and hold",

abstract = "The authors describe a Schottky-diode sample-and-hold (S/H) circuit fabricated in an AlGaAs/GaAs heterojunction bipolar transistor (HBT) process. The transistors exhibit an fT of over 50 GHz. The S/H circuit operates at up to 2G samples/s, with distortion below-40 dBc up to and beyond the Nyquist input frequency of 1 GHz.",

author = "Ken Poulton and Kang, {James S.} and Corcoran, {John J.} and Wang, {Keh Chung} and Asbeck, {Peter M.} and Mau-Chung Chang and Gerard Sullivan",

year = "1988",

month = dec,

day = "1",

doi = "10.1109/GAAS.1988.11057",

language = "English",

pages = "199--202",

}

TY - CONF

T1 - 2Gs/s HBT sample and hold

AU - Poulton, Ken

AU - Kang, James S.

AU - Corcoran, John J.

AU - Wang, Keh Chung

AU - Asbeck, Peter M.

AU - Chang, Mau-Chung

AU - Sullivan, Gerard

PY - 1988/12/1

Y1 - 1988/12/1

N2 - The authors describe a Schottky-diode sample-and-hold (S/H) circuit fabricated in an AlGaAs/GaAs heterojunction bipolar transistor (HBT) process. The transistors exhibit an fT of over 50 GHz. The S/H circuit operates at up to 2G samples/s, with distortion below-40 dBc up to and beyond the Nyquist input frequency of 1 GHz.

AB - The authors describe a Schottky-diode sample-and-hold (S/H) circuit fabricated in an AlGaAs/GaAs heterojunction bipolar transistor (HBT) process. The transistors exhibit an fT of over 50 GHz. The S/H circuit operates at up to 2G samples/s, with distortion below-40 dBc up to and beyond the Nyquist input frequency of 1 GHz.

UR - http://www.scopus.com/inward/record.url?scp=0024123404&partnerID=8YFLogxK

U2 - 10.1109/GAAS.1988.11057

DO - 10.1109/GAAS.1988.11057

M3 - Paper

AN - SCOPUS:0024123404

SP - 199

EP - 202

ER -

2Gs/s HBT sample and hold

Abstract

Access to Document

Other files and links

Fingerprint

Cite this