2Gs/s HBT sample and hold

Ken Poulton*, James S. Kang, John J. Corcoran, Keh Chung Wang, Peter M. Asbeck, Mau-Chung Chang, Gerard Sullivan

*Corresponding author for this work

    Research output: Contribution to conferencePaperpeer-review

    13 Scopus citations

    Abstract

    The authors describe a Schottky-diode sample-and-hold (S/H) circuit fabricated in an AlGaAs/GaAs heterojunction bipolar transistor (HBT) process. The transistors exhibit an fT of over 50 GHz. The S/H circuit operates at up to 2G samples/s, with distortion below-40 dBc up to and beyond the Nyquist input frequency of 1 GHz.

    Original languageEnglish
    Pages199-202
    Number of pages4
    DOIs
    StatePublished - 1 Dec 1988

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