2.4/5.7-GHz Dual-band dual-conversion low-IF downconverter using 0.35 μm SiGe HBT technology

J. S. Syu; Chin-Chun Meng; S. W. Yu; G. W. Huang

doi:10.1149/1.3487565

2.4/5.7-GHz Dual-band dual-conversion low-IF downconverter using 0.35 μm SiGe HBT technology

J. S. Syu^*, Chin-Chun Meng, S. W. Yu, G. W. Huang

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A 2.4Z5.7-GHz dual-band dual-conversion low-IF downconverter is demonstrated using 0.35 μm SiGe heterojunction bipolar transistor (HBT) technology. The first image signal is shifted away from the IF band by a complex Weaver architecture while the second image signal is eliminated by a complex Hartley architecture. The downconverter achieves a 45Z44-dB imagerejection ratio of the first image (IRR₁) and a 50Z48-dB imagerejection ratio of the second image (IRR₂) for 2.4/5.7-GHz modes, respectively, when IF frequency ranges from 20 to 40 MHz.

Original language	English
Title of host publication	SiGe, Ge, and Related Compounds 4
Subtitle of host publication	Materials, Processing, and Devices
Pages	349-353
Number of pages	5
Edition	6
DOIs	https://doi.org/10.1149/1.3487565
State	Published - 1 Dec 2010
Event	4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting - Las Vegas, NV, United States Duration: 10 Oct 2010 → 15 Oct 2010

Publication series

Name	ECS Transactions
Number	6
Volume	33
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
Country/Territory	United States
City	Las Vegas, NV
Period	10/10/10 → 15/10/10

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10.1149/1.3487565

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@inproceedings{265b7edb49a644f5b428cbe124952abc,

title = "2.4/5.7-GHz Dual-band dual-conversion low-IF downconverter using 0.35 μm SiGe HBT technology",

abstract = "A 2.4Z5.7-GHz dual-band dual-conversion low-IF downconverter is demonstrated using 0.35 μm SiGe heterojunction bipolar transistor (HBT) technology. The first image signal is shifted away from the IF band by a complex Weaver architecture while the second image signal is eliminated by a complex Hartley architecture. The downconverter achieves a 45Z44-dB imagerejection ratio of the first image (IRR1) and a 50Z48-dB imagerejection ratio of the second image (IRR2) for 2.4/5.7-GHz modes, respectively, when IF frequency ranges from 20 to 40 MHz.",

author = "Syu, {J. S.} and Chin-Chun Meng and Yu, {S. W.} and Huang, {G. W.}",

year = "2010",

month = dec,

day = "1",

doi = "10.1149/1.3487565",

language = "English",

isbn = "9781566778251",

series = "ECS Transactions",

number = "6",

pages = "349--353",

booktitle = "SiGe, Ge, and Related Compounds 4",

edition = "6",

note = "4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting ; Conference date: 10-10-2010 Through 15-10-2010",

}

Syu, JS, Meng, C-C, Yu, SW & Huang, GW 2010, 2.4/5.7-GHz Dual-band dual-conversion low-IF downconverter using 0.35 μm SiGe HBT technology. in SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices. 6 edn, ECS Transactions, no. 6, vol. 33, pp. 349-353, 4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting, Las Vegas, NV, United States, 10/10/10. https://doi.org/10.1149/1.3487565

2.4/5.7-GHz Dual-band dual-conversion low-IF downconverter using 0.35 μm SiGe HBT technology. / Syu, J. S.; Meng, Chin-Chun; Yu, S. W. et al.
SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices. 6. ed. 2010. p. 349-353 (ECS Transactions; Vol. 33, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - A 2.4Z5.7-GHz dual-band dual-conversion low-IF downconverter is demonstrated using 0.35 μm SiGe heterojunction bipolar transistor (HBT) technology. The first image signal is shifted away from the IF band by a complex Weaver architecture while the second image signal is eliminated by a complex Hartley architecture. The downconverter achieves a 45Z44-dB imagerejection ratio of the first image (IRR1) and a 50Z48-dB imagerejection ratio of the second image (IRR2) for 2.4/5.7-GHz modes, respectively, when IF frequency ranges from 20 to 40 MHz.

AB - A 2.4Z5.7-GHz dual-band dual-conversion low-IF downconverter is demonstrated using 0.35 μm SiGe heterojunction bipolar transistor (HBT) technology. The first image signal is shifted away from the IF band by a complex Weaver architecture while the second image signal is eliminated by a complex Hartley architecture. The downconverter achieves a 45Z44-dB imagerejection ratio of the first image (IRR1) and a 50Z48-dB imagerejection ratio of the second image (IRR2) for 2.4/5.7-GHz modes, respectively, when IF frequency ranges from 20 to 40 MHz.

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2.4/5.7-GHz Dual-band dual-conversion low-IF downconverter using 0.35 μm SiGe HBT technology

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