2.4-GHz 7.4-mW 300-kHz Flicker-Noise-Corner Direct Conversion Receiver Using 0.18 mu m CMOS and Deep-N-Well NPN BJT

Wei-Ling Chang; Chin-Chun Meng; Jin-Siang Syu; Chia-Ling Wang; Guo-Wei Huang

2.4-GHz 7.4-mW 300-kHz Flicker-Noise-Corner Direct Conversion Receiver Using 0.18 mu m CMOS and Deep-N-Well NPN BJT

Wei-Ling Chang^*, Chin-Chun Meng, Jin-Siang Syu, Chia-Ling Wang, Guo-Wei Huang

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

A low-power low-flicker-noise receiver is demonstrated using 0.18 mu m CMOS technology. Vertical-NPN bipolar junction transistors (BJTs) in standard CMOS process are used to substitute the mixer switching core and the input stage of subsequent IF VGA. Compared with the conventional CMOS mixer, the excellent flicker noise performance is obtained. As a result, the receiver achieves a 47 dB voltage gain at 2.4-GHz, and the noise figure is 9.6 dB at IF=100 kHz and 5.6 dB for IF>300 kHz. The total current consumption is 4.3 mA at 1.8 V supply voltage.

Original language	American English
Pages	223-225
Number of pages	3
State	Published - 20 Jan 2013
Event	IEEE Radio and Wireless Symposium (RWS) - Austin Duration: 20 Jan 2013 → 23 Jan 2013

Conference

Conference	IEEE Radio and Wireless Symposium (RWS)
City	Austin
Period	20/01/13 → 23/01/13

Keywords

low power
low flicker noise
direct-conversion receiver
deep-n-well vertical-NPN bipolar junction transistor
Gilbert cell mixer
poly phase filter

Cite this

@conference{2e206e46bc2b4ad297d0af154a8ae8f6,

title = "2.4-GHz 7.4-mW 300-kHz Flicker-Noise-Corner Direct Conversion Receiver Using 0.18 mu m CMOS and Deep-N-Well NPN BJT",

abstract = "A low-power low-flicker-noise receiver is demonstrated using 0.18 mu m CMOS technology. Vertical-NPN bipolar junction transistors (BJTs) in standard CMOS process are used to substitute the mixer switching core and the input stage of subsequent IF VGA. Compared with the conventional CMOS mixer, the excellent flicker noise performance is obtained. As a result, the receiver achieves a 47 dB voltage gain at 2.4-GHz, and the noise figure is 9.6 dB at IF=100 kHz and 5.6 dB for IF>300 kHz. The total current consumption is 4.3 mA at 1.8 V supply voltage.",

keywords = "low power, low flicker noise, direct-conversion receiver, deep-n-well vertical-NPN bipolar junction transistor, Gilbert cell mixer, poly phase filter",

author = "Wei-Ling Chang and Chin-Chun Meng and Jin-Siang Syu and Chia-Ling Wang and Guo-Wei Huang",

year = "2013",

month = jan,

day = "20",

language = "American English",

pages = "223--225",

note = "IEEE Radio and Wireless Symposium (RWS) ; Conference date: 20-01-2013 Through 23-01-2013",

}

TY - CONF

T1 - 2.4-GHz 7.4-mW 300-kHz Flicker-Noise-Corner Direct Conversion Receiver Using 0.18 mu m CMOS and Deep-N-Well NPN BJT

AU - Chang, Wei-Ling

AU - Meng, Chin-Chun

AU - Syu, Jin-Siang

AU - Wang, Chia-Ling

AU - Huang, Guo-Wei

PY - 2013/1/20

Y1 - 2013/1/20

N2 - A low-power low-flicker-noise receiver is demonstrated using 0.18 mu m CMOS technology. Vertical-NPN bipolar junction transistors (BJTs) in standard CMOS process are used to substitute the mixer switching core and the input stage of subsequent IF VGA. Compared with the conventional CMOS mixer, the excellent flicker noise performance is obtained. As a result, the receiver achieves a 47 dB voltage gain at 2.4-GHz, and the noise figure is 9.6 dB at IF=100 kHz and 5.6 dB for IF>300 kHz. The total current consumption is 4.3 mA at 1.8 V supply voltage.

AB - A low-power low-flicker-noise receiver is demonstrated using 0.18 mu m CMOS technology. Vertical-NPN bipolar junction transistors (BJTs) in standard CMOS process are used to substitute the mixer switching core and the input stage of subsequent IF VGA. Compared with the conventional CMOS mixer, the excellent flicker noise performance is obtained. As a result, the receiver achieves a 47 dB voltage gain at 2.4-GHz, and the noise figure is 9.6 dB at IF=100 kHz and 5.6 dB for IF>300 kHz. The total current consumption is 4.3 mA at 1.8 V supply voltage.

KW - low power

KW - low flicker noise

KW - direct-conversion receiver

KW - deep-n-well vertical-NPN bipolar junction transistor

KW - Gilbert cell mixer

KW - poly phase filter

M3 - Paper

SP - 223

EP - 225

T2 - IEEE Radio and Wireless Symposium (RWS)

Y2 - 20 January 2013 through 23 January 2013

ER -

2.4-GHz 7.4-mW 300-kHz Flicker-Noise-Corner Direct Conversion Receiver Using 0.18 mu m CMOS and Deep-N-Well NPN BJT

Abstract

Conference

Keywords

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