20.3 A GaN Gate Driver with On-chip Adaptive On-time Controller and Negative Current Slope Detector

Shu Yung Lin, Ssu Yu Lin, Sheng Hsi Hung, Tz Wun Wang, Ching Ho Li, Chang Lin Go, Shao Chang Huang, Ke Horng Chen, Kuo Lin Zheng, Ying Hsi Lin, Shian Ru Lin, Tsung Yen Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Monolithic gallium nitride (GaN) solutions are widely used in high power density applications, due to low on-resistance (RON) and low parasitic capacitance [1-3]. However, some process defects, such as current collapse, kink effects, and self-heating (top left of Fig. 20.3.1), will degrade the IDS-VDS curve of high voltage GaN devices, which can lead to efficiency degradation and power device damage. Current collapse will increase RON, which will cause the GaN to heat up causing self-heating, and the ID current drops significantly when GaN enters the saturation region. Furthermore, the kink effect induced by hot electrons trapped by donor-like traps through the GaN buffer will induce a negative slope in the triode region, which may lead to blurred transitions from the triode region to the saturation region. Thus, if the detection of saturation is inaccurate, the sudden change from the kink effect to self-heating will limit the current driving capability. Consequently, in flyback converters, part of the inductor current will leak to the secondary side when the primary side GaN is still turned on, resulting in serious shoot-through effects.

Original languageEnglish
Title of host publication2023 IEEE International Solid-State Circuits Conference, ISSCC 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages306-308
Number of pages3
ISBN (Electronic)9781665428002
DOIs
StatePublished - 2023
Event2023 IEEE International Solid-State Circuits Conference, ISSCC 2023 - Virtual, Online, United States
Duration: 19 Feb 202323 Feb 2023

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume2023-February
ISSN (Print)0193-6530

Conference

Conference2023 IEEE International Solid-State Circuits Conference, ISSCC 2023
Country/TerritoryUnited States
CityVirtual, Online
Period19/02/2323/02/23

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