@inproceedings{458478d4421140c3b20598d5cf0bf566,
title = "200mm GaN-on-Si E-Mode Power HEMTs with Epitaxially Grown p-AlN/p-GaN Gate to Enhance Gate Reliability",
abstract = "E-mode power HEMTs with epitaxially grown p-AlN/p-GaN gate are demonstrated for the first time to enhance the gate reliability, including the positive bias temperature instability (PBTI), time-dependent gate breakdown, and the high-temperature gate bias (HTGB). Furthermore, the electroluminescence (EL) emission is conducted to evaluate the electrons-holes recombination through the Magnesium acceptor and deep-level donor in the p-AlN layer, and the TCAD simulations indicate that the hole barrier tunneling can be reduced from the Schottky metal/p-AlN/p-GaN interfaces by using epitaxially grown p-AlN/p-GaN gate stack.",
keywords = "Electroluminescence, HTRB, TDGB, p-AlN, p-GaN HEMT",
author = "Huang, {Zhen Hong} and Chang, {Chia Hao} and Lo, {Ting Chun} and Lee, {Yu Ting} and Lu, {Chih Hung} and Wang, {Hung En} and Tsai, {Yi He} and Cheng, {Ying Chi} and Huang, {Yu Jen} and Chou, {Chin Wen} and Wu, {Tian Li}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 ; Conference date: 02-06-2024 Through 06-06-2024",
year = "2024",
doi = "10.1109/ISPSD59661.2024.10579679",
language = "English",
series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "319--322",
booktitle = "2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings",
address = "美國",
}