20 Gbit/s AIGaAs/GaAs HBT decision circuit IC

G. Runge, J. L. Gimlett, R. B. Nubling, K. C. Wang, Mau-Chung Chang, R. L. Pierson, P. M. Asbeck

    Research output: Contribution to journalArticlepeer-review

    3 Scopus citations


    An experimental 20 Gbit/s decision circuit IC based on AlGaAs/GaAs HBTs has been implemented, which features a differential input sensitivity of 80 mV peak to peak and a phase margin of 292° at the SONET STS-192 rate of 9·95 Gbit/s. The IC nominally dissipates 870 mW of power, but may be operated up to 10 Gbit/s with a power dissipation of 450 mW. The circuit was fabricated in a high current gain baseline HBT technology, and occupies an area of 1·15 × 1 mm2.

    Original languageEnglish
    Pages (from-to)2376-2378
    Number of pages3
    JournalElectronics Letters
    Issue number25
    StatePublished - 5 Dec 1991


    • Decision circuits
    • Integrated circuits
    • Optical communication


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