2-V-operation δ-doped power HEMT's for personal handy-phone systems

Yeong Lin Lai*, Edward Yi Chang, Chun Yen Chang, T. H. Liu, S. P. Wang, H. T. Hsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


A high-efficiency and high-power-density δ-doped AlGaAs/InGaAs HEMT with low adjacent channel leakage has been developed for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz π/4-shifted quadrature phase shift keying (QPSK) modulated PHS standard signals, the 2.0-V-operation HEMT with a 1-mm gate width demonstrated a power-added efficiency of 45.3% and an output power density of 105 mW/mm. This is the highest power density ever reported by the power transistors for the PHS. The state-of-the-art results for the PHS operating at 2.0 V were achieved by the δ-doped power HEMT for the first time.

Original languageEnglish
Article number605483
Pages (from-to)219-221
Number of pages3
JournalIEEE Microwave and Guided Wave Letters
Issue number8
StatePublished - 1 Aug 1997


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