@inproceedings{7cc50e8257074d5e9ec1ad358216f61c,
title = "2-GHz 1.35-dB NF pHEMT single-voltage-supply process-independent low-noise amplifier",
abstract = "A 2-GHz single-voltage-supply 0.15-μm depletion-mode (D-mode) pseudomorphic high electron-mobility transistor (pHEMT) low-noise amplifier (LNA) is demonstrated with a proposed process-independent self-biasing scheme. The current-reused technique is also employed to achieve a common-source common-drain two-stage LNA under a dc current of 10.85 mA at a 3-V supply. As a result, the proposed LNA achieves 20-dB power gain and 1.35-dB noise figure (NF) at 2 GHz while the minimum NF=1.3 dB occurs at 2.4 GHz.",
keywords = "Current-reuse, Low-noise amplifier (LNA), Pseudomorphic high electron-mobility transistor (pHEMT), Singlevoltage-supply",
author = "Syu, {Jin Siang} and Chin-Chun Meng and Chun Yang and Huang, {Guo Wei}",
year = "2018",
month = feb,
day = "28",
doi = "10.1109/RWS.2018.8304952",
language = "English",
series = "IEEE Radio and Wireless Symposium, RWS",
publisher = "IEEE Computer Society",
pages = "84--87",
booktitle = "RWS 2018 - Proceedings",
address = "美國",
note = "2018 IEEE Radio and Wireless Symposium, RWS 2018 ; Conference date: 14-01-2018 Through 17-01-2018",
}