TY - GEN
T1 - 2-bit Poly-Si-TFT nonvolatile memory using hafnium oxide, hafnium silicate and zirconium silicate
AU - Lin, Yu Hsien
AU - Chien, Chao-Hsin
AU - Chou, Tung Hung
AU - Chao, Tien-Sheng
AU - Chang, Chun Yen
AU - Lei, Tan Fu
PY - 2005
Y1 - 2005
N2 - In this paper, we, for the first time, have successfully fabricated SONOS-type poly-Si-TFT memories employing three kinds of high-k dielectrics, including HfO2, Hf-silicate and Zr-silicate, as the trapping layer with low-thermal budget processing. It was demonstrated that the fabricated memories exhibit good performance in terms of relatively large memory window, high program/erase speed (1ms/10ms), long retention time (>106s for 20% charge loss) and negligible read/write disturbances. In particular, 2-bit operation has been successfully demonstrated.
AB - In this paper, we, for the first time, have successfully fabricated SONOS-type poly-Si-TFT memories employing three kinds of high-k dielectrics, including HfO2, Hf-silicate and Zr-silicate, as the trapping layer with low-thermal budget processing. It was demonstrated that the fabricated memories exhibit good performance in terms of relatively large memory window, high program/erase speed (1ms/10ms), long retention time (>106s for 20% charge loss) and negligible read/write disturbances. In particular, 2-bit operation has been successfully demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=33847724297&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2005.1609511
DO - 10.1109/IEDM.2005.1609511
M3 - Conference contribution
AN - SCOPUS:33847724297
SN - 078039268X
SN - 9780780392687
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 927
EP - 930
BT - IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
T2 - IEEE International Electron Devices Meeting, 2005 IEDM
Y2 - 5 December 2005 through 7 December 2005
ER -