1/f noise in micrometer-sized ultrathin indium tin oxide films

Sheng-Shiuan Yeh; Wei Ming Hsu; Jui Kan Lee; Yao Jen Lee; Juhn-Jong Lin

doi:10.1063/1.4821938

1/f noise in micrometer-sized ultrathin indium tin oxide films

Sheng-Shiuan Yeh, Wei Ming Hsu, Jui Kan Lee, Yao Jen Lee, Juhn-Jong Lin

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We have measured the low-frequency noises of ultrathin indium tin oxide films to investigate the effect of post annealing on the noise level. The noises obtained obey an approximate 1 / f law in the frequency range f ≈ 0.1-20 Hz. The microstructures and grain sizes of our films were altered by adjusting the annealing conditions. An enhancement of the noise level was observed for those samples comprising smaller grains, where numerous grain boundaries exist. This enhancement in the noise level is ascribed to atomic diffusion along grain boundaries or dynamics of two-level systems near the grain boundaries.

Original language	English
Article number	123118
Number of pages	4
Journal	Applied Physics Letters
Volume	103
Issue number	12
DOIs	https://doi.org/10.1063/1.4821938
State	Published - 16 Sep 2013

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abstract = "We have measured the low-frequency noises of ultrathin indium tin oxide films to investigate the effect of post annealing on the noise level. The noises obtained obey an approximate 1 / f law in the frequency range f ≈ 0.1-20 Hz. The microstructures and grain sizes of our films were altered by adjusting the annealing conditions. An enhancement of the noise level was observed for those samples comprising smaller grains, where numerous grain boundaries exist. This enhancement in the noise level is ascribed to atomic diffusion along grain boundaries or dynamics of two-level systems near the grain boundaries.",

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AU - Hsu, Wei Ming

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AU - Lin, Juhn-Jong

PY - 2013/9/16

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N2 - We have measured the low-frequency noises of ultrathin indium tin oxide films to investigate the effect of post annealing on the noise level. The noises obtained obey an approximate 1 / f law in the frequency range f ≈ 0.1-20 Hz. The microstructures and grain sizes of our films were altered by adjusting the annealing conditions. An enhancement of the noise level was observed for those samples comprising smaller grains, where numerous grain boundaries exist. This enhancement in the noise level is ascribed to atomic diffusion along grain boundaries or dynamics of two-level systems near the grain boundaries.

AB - We have measured the low-frequency noises of ultrathin indium tin oxide films to investigate the effect of post annealing on the noise level. The noises obtained obey an approximate 1 / f law in the frequency range f ≈ 0.1-20 Hz. The microstructures and grain sizes of our films were altered by adjusting the annealing conditions. An enhancement of the noise level was observed for those samples comprising smaller grains, where numerous grain boundaries exist. This enhancement in the noise level is ascribed to atomic diffusion along grain boundaries or dynamics of two-level systems near the grain boundaries.

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1/f noise in micrometer-sized ultrathin indium tin oxide films

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