Abstract
In this article, high-performance vertical gallium nitride (GaN)-on-GaN Schottky barrier diodes (SBDs) with helium (He)-implanted edge termination (ET) structure were demonstrated for the first time. Owing to the feature of He-implanted ET structure, the peak electric field crowding effect underneath the Schottky contact metal edge has been significantly reduced, thus increasing the breakdown voltage <formula> <tex>$V_{BR}$</tex> </formula> of the diodes. Under the same testing conditions, <formula> <tex>$V_{BR}$</tex> </formula> was increased from 862 to 1725 V for the devices with He-implanted ET structure, which also have low specific differential on-resistance <formula> <tex>$R_{{on}}$</tex> </formula> of 5.1 mΩ · cm² and low turn-on voltage <formula> <tex>$V_{{on}}$</tex> </formula> of 0.63 V. Given <formula> <tex>$V_{{on}}$</tex> </formula> of <0.7 V, the vertical GaN SBDs with He-implanted ET structure show the highest <formula> <tex>$V_{BR}$</tex> </formula> in the reported work up to today.
Original language | English |
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Journal | IEEE Transactions on Electron Devices |
DOIs | |
State | Accepted/In press - 2022 |
Keywords
- Edge termination (ET)
- Gallium nitride
- gallium nitride (GaN)-on-GaN
- Helium
- helium ion implantation
- high breakdown voltage
- Ion implantation
- Ions
- Lattices
- low turn-on voltage.
- Schottky barriers
- Schottky diodes