1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination

Xinke Liu, Feng Lin, Jian Li, Yuheng Lin, Junye Wu, Haofan Wang, Xiaohua Li, Shuangwu Huang, Qi Wang, Hsien Chin Chiu, Hao Chung Kuo

Research output: Contribution to journalArticlepeer-review

Abstract

In this article, high-performance vertical gallium nitride (GaN)-on-GaN Schottky barrier diodes (SBDs) with helium (He)-implanted edge termination (ET) structure were demonstrated for the first time. Owing to the feature of He-implanted ET structure, the peak electric field crowding effect underneath the Schottky contact metal edge has been significantly reduced, thus increasing the breakdown voltage <formula> <tex>$V_{BR}$</tex> </formula> of the diodes. Under the same testing conditions, <formula> <tex>$V_{BR}$</tex> </formula> was increased from 862 to 1725 V for the devices with He-implanted ET structure, which also have low specific differential on-resistance <formula> <tex>$R_{{on}}$</tex> </formula> of 5.1 m&#x03A9; &#x00B7; cm&#x00B2; and low turn-on voltage <formula> <tex>$V_{{on}}$</tex> </formula> of 0.63 V. Given <formula> <tex>$V_{{on}}$</tex> </formula> of &lt;0.7 V, the vertical GaN SBDs with He-implanted ET structure show the highest <formula> <tex>$V_{BR}$</tex> </formula> in the reported work up to today.

Original languageEnglish
JournalIEEE Transactions on Electron Devices
DOIs
StateAccepted/In press - 2022

Keywords

  • Edge termination (ET)
  • Gallium nitride
  • gallium nitride (GaN)-on-GaN
  • Helium
  • helium ion implantation
  • high breakdown voltage
  • Ion implantation
  • Ions
  • Lattices
  • low turn-on voltage.
  • Schottky barriers
  • Schottky diodes

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