16-nm multigate and multifin MOSFET device and SRAM circuits

Keyphrases

• Multi-gate 100%
• Static Random Access Memory 100%
• MOSFET Device 100%
• Multi-fin 100%
• Memory Circuits 100%
• Fin Field-effect Transistor (FinFET) 41%
• Transistor 41%
• Inverter 25%
• Random Dopants 25%
• Drive Current 16%
• Tri-gate 16%
• Quasi-planar 16%
• Surface Potential 16%
• Fin Structure 8%
• High Transconductance 8%
• Field-effect Transistors 8%
• DC Characteristics 8%
• Aspect Ratio 8%
• Three-dimensional Devices 8%
• Dynamic Behavior 8%
• Fin Width 8%
• Transient Characteristics 8%
• Device Simulation 8%
• Fin number 8%
• Wfin 8%
• Gate Delay 8%
• Gate Capacitance 8%
• AR(1) 8%
• Random Dopant Fluctuation 8%
• Static Noise Margin 8%
• Fin Height 8%
• Circuit Characteristics 8%
• Field Effect Transistor Circuits 8%
• Characteristic Fluctuation 8%

Engineering

• Dopants 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Random Access Memory 100%
• Inverter 75%
• Field Effect Transistor 50%
• Field-Effect Transistor 50%
• Surface Potential 50%
• Simulation Result 25%
• Transients 25%
• Dynamic Behavior 25%
• Fin Width 25%
• Noise Margin 25%
• Gate Capacitance 25%
• Fin Height 25%
• Characteristic Circuit 25%
• Aspect Ratio 25%
• Controllability 25%

Material Science

• Transistor 100%
• Electronic Circuit 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Doping (Additives) 80%
• Field Effect Transistor 80%
• Surface (Surface Science) 40%
• Capacitance 20%