150-nm continuous tuning of external-cavity quantum-dot lasers operated below 90 mA

Yu Chen Chen*, Kuo-Jui Lin, Pei Yin Su, Hsu Chieh Cheng

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    Low threshold and widely tunable InAs/InGaAs/GaAs quantum-dot external-cavity lasers are implemented with gratingcoupled Littrow configuration. Throughout the tuning range of 130 nm, from 1160 to 1290 nm, the threshold current density is less than 0.9 kA/cm2 and without noticeable threshold jump. For a shorter-cavity device, the injection current is kept at a record low value of 90 mA but the tuning range is further extended from 1143 to 1293 nm. We discuss the effect of cavity length on the tuning characteristics and propose the strategy for design and optimization of multilayer quantum-dot structure.

    Original languageEnglish
    Title of host publicationPhotonic Fiber and Crystal Devices
    Subtitle of host publicationAdvances in Materials and Innovations in Device Applications VI
    DOIs
    StatePublished - 1 Dec 2012
    EventPhotonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VI - San Diego, CA, United States
    Duration: 12 Aug 201213 Aug 2012

    Publication series

    NameProceedings of SPIE - The International Society for Optical Engineering
    Volume8497
    ISSN (Print)0277-786X

    Conference

    ConferencePhotonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VI
    Country/TerritoryUnited States
    CitySan Diego, CA
    Period12/08/1213/08/12

    Keywords

    • External-cavity lasers
    • Quantum-dot lasers
    • Semiconductor lasers
    • Tunable lasers

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