1.3 μm light emission froni Al 2 O 3 /Si 1-x Ge x /Si MOS tunnel diodes

C. Y. Lin, H. Y. Lee, Albert Chin, Y. T. Hou, M. F. Li, S. P. McAlister, D. L. Kwong

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    Light emission at ∼1.3 μm was measured at room temperature in Al2O3/Si1-xGexMOS tunnel diodes on Si substrates.

    Original languageEnglish
    Title of host publicationCLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics
    Subtitle of host publicationPhotonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages269
    Number of pages1
    ISBN (Electronic)0780377664
    DOIs
    StatePublished - 2003
    Event5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003 - Taipei, Taiwan
    Duration: 15 Dec 200319 Dec 2003

    Publication series

    NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
    Volume1

    Conference

    Conference5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003
    Country/TerritoryTaiwan
    CityTaipei
    Period15/12/0319/12/03

    Fingerprint

    Dive into the research topics of '1.3 μm light emission froni Al 2 O 3 /Si 1-x Ge x /Si MOS tunnel diodes'. Together they form a unique fingerprint.

    Cite this