1.3 μm InAs quantum dot resonant cavity light emitting diodes

Y. K. Su; Hsin-Chieh Yu; S. J. Chang; C. T. Lee; J. S. Wang; A. R. Kovsh; Y. T. Wu; K. F. Lin; C. Y. Huang

doi:10.1016/j.mseb.2004.02.005

1.3 μm InAs quantum dot resonant cavity light emitting diodes

Y. K. Su, Hsin-Chieh Yu, S. J. Chang^*, C. T. Lee, J. S. Wang, A. R. Kovsh, Y. T. Wu, K. F. Lin, C. Y. Huang

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Resonant cavity light emitting diodes (RCLEDs) containing nine sheets of self-organized InAs quantum dot (QD) active layers and operating at around 1.3μm are demonstrated. The structure was grown directly on GaAs substrates, which includes selectively oxidized AlO_x current apertures and intracavity metal contacts. It was found that the average operating resistance is 60Ω, while the average turn-on voltages is 1.6V. It was also found that temperature coefficient of these RCLEDs was about 0.11nm/°C.

Original language	English
Pages (from-to)	256-259
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	110
Issue number	3
DOIs	https://doi.org/10.1016/j.mseb.2004.02.005
State	Published - 25 Jul 2004

Keywords

InAs
Oxide confinement
QD
RCLED

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10.1016/j.mseb.2004.02.005

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@article{c493b5bbf0104b63aceacd28558cfffb,

title = "1.3 μm InAs quantum dot resonant cavity light emitting diodes",

abstract = "Resonant cavity light emitting diodes (RCLEDs) containing nine sheets of self-organized InAs quantum dot (QD) active layers and operating at around 1.3μm are demonstrated. The structure was grown directly on GaAs substrates, which includes selectively oxidized AlOx current apertures and intracavity metal contacts. It was found that the average operating resistance is 60Ω, while the average turn-on voltages is 1.6V. It was also found that temperature coefficient of these RCLEDs was about 0.11nm/°C.",

keywords = "InAs, Oxide confinement, QD, RCLED",

author = "Su, {Y. K.} and Hsin-Chieh Yu and Chang, {S. J.} and Lee, {C. T.} and Wang, {J. S.} and Kovsh, {A. R.} and Wu, {Y. T.} and Lin, {K. F.} and Huang, {C. Y.}",

year = "2004",

month = jul,

day = "25",

doi = "10.1016/j.mseb.2004.02.005",

language = "English",

volume = "110",

pages = "256--259",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier Ltd",

number = "3",

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TY - JOUR

T1 - 1.3 μm InAs quantum dot resonant cavity light emitting diodes

AU - Su, Y. K.

AU - Yu, Hsin-Chieh

AU - Chang, S. J.

AU - Lee, C. T.

AU - Wang, J. S.

AU - Kovsh, A. R.

AU - Wu, Y. T.

AU - Lin, K. F.

AU - Huang, C. Y.

PY - 2004/7/25

Y1 - 2004/7/25

N2 - Resonant cavity light emitting diodes (RCLEDs) containing nine sheets of self-organized InAs quantum dot (QD) active layers and operating at around 1.3μm are demonstrated. The structure was grown directly on GaAs substrates, which includes selectively oxidized AlOx current apertures and intracavity metal contacts. It was found that the average operating resistance is 60Ω, while the average turn-on voltages is 1.6V. It was also found that temperature coefficient of these RCLEDs was about 0.11nm/°C.

AB - Resonant cavity light emitting diodes (RCLEDs) containing nine sheets of self-organized InAs quantum dot (QD) active layers and operating at around 1.3μm are demonstrated. The structure was grown directly on GaAs substrates, which includes selectively oxidized AlOx current apertures and intracavity metal contacts. It was found that the average operating resistance is 60Ω, while the average turn-on voltages is 1.6V. It was also found that temperature coefficient of these RCLEDs was about 0.11nm/°C.

KW - InAs

KW - Oxide confinement

KW - QD

KW - RCLED

UR - http://www.scopus.com/inward/record.url?scp=2942585623&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2004.02.005

DO - 10.1016/j.mseb.2004.02.005

M3 - Article

AN - SCOPUS:2942585623

SN - 0921-5107

VL - 110

SP - 256

EP - 259

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 3

ER -

1.3 μm InAs quantum dot resonant cavity light emitting diodes

Abstract

Keywords

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