1.3-μm InAs-InGaAs Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Fully Doped DBRs Grown by MBE

Hsin-Chieh Yu; Y. K. Su; S. J. Chang; K. F. Lin; J. M. Wang; J. Y. Chi; R. S. Hsiao

doi:10.1109/LPT.2005.863166

1.3-μm InAs-InGaAs Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Fully Doped DBRs Grown by MBE

Hsin-Chieh Yu, Y. K. Su, S. J. Chang, K. F. Lin, J. M. Wang, J. Y. Chi, R. S. Hsiao

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

We report InAs-InGaAs quantum-dot vertical-cavity surface-emitting lasers (VCSELs) grown by molecular beam epitaxy with fully doped n- and p-doped AlGaAs distributed Bragg reflectors and including an AlAs layer to form a current and waveguiding aperture. The metal contacts are deposited on a topmost p+ -GaAs contact layer and on the bottom surface of the n+ -GaAs substrate. This conventional selectively oxidized top-emitting device configuration avoids the added complexity of fabricating intracavity or coplanar ohmic contacts. The VCSELs operate continuous-wave at room temperature with peak output powers of 0.33 mW and differential slope efficiencies up to 0.23 W/A. The peak lasing wavelengths are near 1.275 μm, with a sidemode suppression ratio of 28 dB.

Original language	English
Pages (from-to)	418-420
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	18
Issue number	2
DOIs	https://doi.org/10.1109/LPT.2005.863166
State	Published - 15 Jan 2006

Keywords

Fully doped distributed Bragg reflector (DBR)
InAs quantum dot (QD)
molecular beam epitaxy (MBE)
vertical-cavity surface-emitting laser (VCSEL)

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10.1109/LPT.2005.863166

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title = "1.3-μm InAs-InGaAs Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Fully Doped DBRs Grown by MBE",

abstract = "We report InAs-InGaAs quantum-dot vertical-cavity surface-emitting lasers (VCSELs) grown by molecular beam epitaxy with fully doped n- and p-doped AlGaAs distributed Bragg reflectors and including an AlAs layer to form a current and waveguiding aperture. The metal contacts are deposited on a topmost p+ -GaAs contact layer and on the bottom surface of the n+ -GaAs substrate. This conventional selectively oxidized top-emitting device configuration avoids the added complexity of fabricating intracavity or coplanar ohmic contacts. The VCSELs operate continuous-wave at room temperature with peak output powers of 0.33 mW and differential slope efficiencies up to 0.23 W/A. The peak lasing wavelengths are near 1.275 μm, with a sidemode suppression ratio of 28 dB.",

keywords = "Fully doped distributed Bragg reflector (DBR), InAs quantum dot (QD), molecular beam epitaxy (MBE), vertical-cavity surface-emitting laser (VCSEL)",

author = "Hsin-Chieh Yu and Su, {Y. K.} and Chang, {S. J.} and Lin, {K. F.} and Wang, {J. M.} and Chi, {J. Y.} and Hsiao, {R. S.}",

year = "2006",

month = jan,

day = "15",

doi = "10.1109/LPT.2005.863166",

language = "English",

volume = "18",

pages = "418--420",

journal = "IEEE Photonics Technology Letters",

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T1 - 1.3-μm InAs-InGaAs Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Fully Doped DBRs Grown by MBE

AU - Yu, Hsin-Chieh

AU - Su, Y. K.

AU - Chang, S. J.

AU - Lin, K. F.

AU - Wang, J. M.

AU - Chi, J. Y.

AU - Hsiao, R. S.

PY - 2006/1/15

Y1 - 2006/1/15

N2 - We report InAs-InGaAs quantum-dot vertical-cavity surface-emitting lasers (VCSELs) grown by molecular beam epitaxy with fully doped n- and p-doped AlGaAs distributed Bragg reflectors and including an AlAs layer to form a current and waveguiding aperture. The metal contacts are deposited on a topmost p+ -GaAs contact layer and on the bottom surface of the n+ -GaAs substrate. This conventional selectively oxidized top-emitting device configuration avoids the added complexity of fabricating intracavity or coplanar ohmic contacts. The VCSELs operate continuous-wave at room temperature with peak output powers of 0.33 mW and differential slope efficiencies up to 0.23 W/A. The peak lasing wavelengths are near 1.275 μm, with a sidemode suppression ratio of 28 dB.

AB - We report InAs-InGaAs quantum-dot vertical-cavity surface-emitting lasers (VCSELs) grown by molecular beam epitaxy with fully doped n- and p-doped AlGaAs distributed Bragg reflectors and including an AlAs layer to form a current and waveguiding aperture. The metal contacts are deposited on a topmost p+ -GaAs contact layer and on the bottom surface of the n+ -GaAs substrate. This conventional selectively oxidized top-emitting device configuration avoids the added complexity of fabricating intracavity or coplanar ohmic contacts. The VCSELs operate continuous-wave at room temperature with peak output powers of 0.33 mW and differential slope efficiencies up to 0.23 W/A. The peak lasing wavelengths are near 1.275 μm, with a sidemode suppression ratio of 28 dB.

KW - Fully doped distributed Bragg reflector (DBR)

KW - InAs quantum dot (QD)

KW - molecular beam epitaxy (MBE)

KW - vertical-cavity surface-emitting laser (VCSEL)

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U2 - 10.1109/LPT.2005.863166

DO - 10.1109/LPT.2005.863166

M3 - Article

AN - SCOPUS:85008031227

SN - 1041-1135

VL - 18

SP - 418

EP - 420

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 2

ER -

1.3-μm InAs-InGaAs Quantum-Dot Vertical-Cavity Surface-Emitting Laser With Fully Doped DBRs Grown by MBE

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Keywords

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