110-140-GHz Wide-IF-Band 65-nm CMOS Receiver Design for Fusion Plasma Diagnostics

Ying Chen, Robert Hu, Jo Han Yu, Yu Ye, Yilun Zhu, Xianzi Liu, Shasha Qiu, Jingjun Chen, Xiaoguang Liu, Calvin Domier, Neville C. Luhmann

Research output: Contribution to journalArticlepeer-review

Abstract

Development of millimeter-wave wideband receivers is critical for understanding and controlling the nuclear fusion plasma dynamics for renewable energy generation. This article describes the latest progress in the design of a 110-140-GHz wide-intermediate frequency (IF)-bandwidth, 65-nm CMOS chip receiver. This receiver chip includes a radio frequency-low noise amplifier (RF-LNA), actively biased broadband mixer, 2-18-GHz IF-amp, 36-47-GHz tripler, and a 110-140-GHz driver amplifier. The chip size is 1250 x 1150 μ m² and its total power consumption is 250 mW at 1.8-V bias or 400 mW at 2.5 V. The on-wafer measured conversion gain is 7 dB, noise figure (NF) is 14 dB at 110 GHz, and the RF-IP1dB is -21 dBm. In addition to fusion plasma diagnostics, this 65-nm CMOS receiver is applicable for use in applications such as the high-speed local networking around the 118-GHz oxygen absorption line and millimeter-wave test instruments in the post-5G era.

Original languageEnglish
JournalIEEE Microwave and Wireless Components Letters
DOIs
StateAccepted/In press - 2022

Keywords

  • Baluns
  • CMOS
  • Gain
  • millimeter wave
  • Mixers
  • nuclear fusion
  • plasma
  • Plasma diagnostics
  • Radio frequency
  • receiver
  • Receivers
  • Transistors
  • wide band.

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