1.1 Gbit/s RF-interconnect based on 10 GHz RF-modulation in 0.18 μm CMOS

H. Shin*, Mau-Chung Chang

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    4 Scopus citations

    Abstract

    An RF-interconnect transceiver based on the RF-modulation and capacitive coupling for a high speed digital interface is presented. The prototype transceiver is implemented in 0.18 μm CMOS technology. It demonstrates a maximum data rate of 1.1 Gbit/s with a 10 GHz RF-modulation. This RF-interconnect is believed to be instrumental for high-speed link applications in multi-memory and microprocessor interfaces.

    Original languageEnglish
    Pages (from-to)71-72
    Number of pages2
    JournalElectronics Letters
    Volume38
    Issue number2
    DOIs
    StatePublished - 17 Jan 2002

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