10Gbps operation of a metamorphic InGaP buffered in0.53Ga 0.47As p-i-n photodetector grown on GaAs substrate

Yu Sheng Liao; Gong Ru Lin; Chi Kuan Lin; Yi Shiang Chu; Hao-Chung Kuo; Milton Feng

doi:10.1117/12.636697

10Gbps operation of a metamorphic InGaP buffered in_0.53Ga _0.47As p-i-n photodetector grown on GaAs substrate

Yu Sheng Liao, Gong Ru Lin^*, Chi Kuan Lin, Yi Shiang Chu, Hao-Chung Kuo, Milton Feng

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

Abstract

A novel top-illuminated In_0.53Ga_0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using a linearly graded metamorphic In_xGa_1-xP (x graded from 0.49 to 1) buffer layer has been demonstrated on the SONET OC-192 receiving performance. With a cost-efficient TO-46 package, the MM-PINPD at data rate of 10 Gbit/s can be obtained at minimum optical power of -19.5 dBm. At wavelength of 1550nm, the dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.6 A/W, 3.4×10^-15 W/Hz^1/2, and 8 GHz, respectively. All the parameters are comparable to those of similar devices made on InP substrate or other InGaAs products epitaxially grown on an InGaAlAs buffered GaAs substrate. The performances of the MM-PINPD on GaAs are analyzed by impulse injecting of 1.2-ps pulse-train, eye pattern at 10Gbps, and frequency response from VNA.

Original language	English
Article number	602023
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6020
DOIs	https://doi.org/10.1117/12.636697
State	Published - 2005
Event	Optoelectronic Materials and Devices for Optical Communications - Shanghai, China Duration: 7 Nov 2005 → 10 Nov 2005

Keywords

GaAs
InGaAs
InGaP
Metamorphic
OC-192
P-i-n Photodetector
Receiver

Access to Document

10.1117/12.636697

Cite this

@article{49f34c42ecd04c3c9ffbf0e89beb0a07,

title = "10Gbps operation of a metamorphic InGaP buffered in0.53Ga 0.47As p-i-n photodetector grown on GaAs substrate",

abstract = "A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using a linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer has been demonstrated on the SONET OC-192 receiving performance. With a cost-efficient TO-46 package, the MM-PINPD at data rate of 10 Gbit/s can be obtained at minimum optical power of -19.5 dBm. At wavelength of 1550nm, the dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.6 A/W, 3.4×10-15 W/Hz1/2, and 8 GHz, respectively. All the parameters are comparable to those of similar devices made on InP substrate or other InGaAs products epitaxially grown on an InGaAlAs buffered GaAs substrate. The performances of the MM-PINPD on GaAs are analyzed by impulse injecting of 1.2-ps pulse-train, eye pattern at 10Gbps, and frequency response from VNA.",

keywords = "GaAs, InGaAs, InGaP, Metamorphic, OC-192, P-i-n Photodetector, Receiver",

author = "Liao, {Yu Sheng} and Lin, {Gong Ru} and Lin, {Chi Kuan} and Chu, {Yi Shiang} and Hao-Chung Kuo and Milton Feng",

year = "2005",

doi = "10.1117/12.636697",

language = "English",

volume = "6020",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Optoelectronic Materials and Devices for Optical Communications ; Conference date: 07-11-2005 Through 10-11-2005",

}

TY - JOUR

T1 - 10Gbps operation of a metamorphic InGaP buffered in0.53Ga 0.47As p-i-n photodetector grown on GaAs substrate

AU - Liao, Yu Sheng

AU - Lin, Gong Ru

AU - Lin, Chi Kuan

AU - Chu, Yi Shiang

AU - Kuo, Hao-Chung

AU - Feng, Milton

PY - 2005

Y1 - 2005

N2 - A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using a linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer has been demonstrated on the SONET OC-192 receiving performance. With a cost-efficient TO-46 package, the MM-PINPD at data rate of 10 Gbit/s can be obtained at minimum optical power of -19.5 dBm. At wavelength of 1550nm, the dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.6 A/W, 3.4×10-15 W/Hz1/2, and 8 GHz, respectively. All the parameters are comparable to those of similar devices made on InP substrate or other InGaAs products epitaxially grown on an InGaAlAs buffered GaAs substrate. The performances of the MM-PINPD on GaAs are analyzed by impulse injecting of 1.2-ps pulse-train, eye pattern at 10Gbps, and frequency response from VNA.

AB - A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using a linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer has been demonstrated on the SONET OC-192 receiving performance. With a cost-efficient TO-46 package, the MM-PINPD at data rate of 10 Gbit/s can be obtained at minimum optical power of -19.5 dBm. At wavelength of 1550nm, the dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.6 A/W, 3.4×10-15 W/Hz1/2, and 8 GHz, respectively. All the parameters are comparable to those of similar devices made on InP substrate or other InGaAs products epitaxially grown on an InGaAlAs buffered GaAs substrate. The performances of the MM-PINPD on GaAs are analyzed by impulse injecting of 1.2-ps pulse-train, eye pattern at 10Gbps, and frequency response from VNA.

KW - GaAs

KW - InGaAs

KW - InGaP

KW - Metamorphic

KW - OC-192

KW - P-i-n Photodetector

KW - Receiver

UR - http://www.scopus.com/inward/record.url?scp=33644973076&partnerID=8YFLogxK

U2 - 10.1117/12.636697

DO - 10.1117/12.636697

M3 - Conference article

AN - SCOPUS:33644973076

SN - 0277-786X

VL - 6020

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 602023

T2 - Optoelectronic Materials and Devices for Optical Communications

Y2 - 7 November 2005 through 10 November 2005

ER -

10Gbps operation of a metamorphic InGaP buffered in_0.53Ga _0.47As p-i-n photodetector grown on GaAs substrate

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this