An emerging trend in semiconductor device manufacturing is the use of CoSi2 salicide technology for 0.25 μm CMOS devices. This methodology offers low sheet and gate resistances, allowing noise figures of less than 1 dB, particularly for analog MOSFETs. Moreover, this technology can produce CMOS devices that exhibit good thermodynamic stability up to 1,000 °C.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1997|
|Event||Proceedings of the 1997 Symposium on VLSI Technology - Kyoto, Jpn|
Duration: 10 Jun 1997 → 12 Jun 1997