0.18 μm SiGe BiCMOS microwave/millimeter-wave dual-mode dual-conversion receiver architecture with a tunable RF channel selection at low-flicker-noise microwave mode

Wei Ling Chang; Chin-Chun Meng; Shih Der Yang; Guo Wei Huang

doi:10.1109/MWSYM.2017.8058992

0.18 μm SiGe BiCMOS microwave/millimeter-wave dual-mode dual-conversion receiver architecture with a tunable RF channel selection at low-flicker-noise microwave mode

Wei Ling Chang, Chin-Chun Meng, Shih Der Yang, Guo Wei Huang

Institute of Communications Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

A dual-mode receiver architecture with tens-MHz channel bandwidth at microwave mode and GHz channel bandwidth at millimeter-wave mode is demonstrated in this work with a tunable active filter for RF channel selection at microwave mode using 0.18 μm SiGe BiCMOS technology. A dual conversion is employed to accommodate the wide-channel-bandwidth 60-GHz mode at the first conversion stage and the high-level-modulation 5-GHz mode is merged to the second conversion stage through sharing the 5-GHz switchable Gilbert IQ mixers with the 60-GHz mode. A tunable RF active filter is inserted between the 5-GHz LNA and the second stage mixer to serve as RF channel selection at the 5-GHz mode with the ability of relaxing the stringent linearity requirement imposed by high-level-modulation scheme. 10 dB gain with a 2-GHz channel bandwidth at the 60-GHz mode and 23 dB gain with a 20 MHz channel bandwidth within the 600 MHz tuning range at 5-GHz mode are demonstrated with a low-flicker-noise corner of less than 60 KHz at the 5-GHz mode because of the use of SiGe HBT as the IQ Gilbert mixer cores at the second conversion stage.

Original language	English
Title of host publication	2017 IEEE MTT-S International Microwave Symposium, IMS 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1778-1780
Number of pages	3
ISBN (Electronic)	9781509063604
DOIs	https://doi.org/10.1109/MWSYM.2017.8058992
State	Published - 4 Oct 2017
Event	2017 IEEE MTT-S International Microwave Symposium, IMS 2017 - Honololu, United States Duration: 4 Jun 2017 → 9 Jun 2017

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
ISSN (Print)	0149-645X

Conference

Conference	2017 IEEE MTT-S International Microwave Symposium, IMS 2017
Country/Territory	United States
City	Honololu
Period	4/06/17 → 9/06/17

Keywords

Dual-conversion
Dual-mode
Q-enhanced active filter
RF channel selection
Schottky diode
SiGe BiCMOS

Access to Document

10.1109/MWSYM.2017.8058992

Cite this

Chang, W. L., Meng, C.-C., Yang, S. D., & Huang, G. W. (2017). 0.18 μm SiGe BiCMOS microwave/millimeter-wave dual-mode dual-conversion receiver architecture with a tunable RF channel selection at low-flicker-noise microwave mode. In 2017 IEEE MTT-S International Microwave Symposium, IMS 2017 (pp. 1778-1780). Article 8058992 (IEEE MTT-S International Microwave Symposium Digest). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWSYM.2017.8058992

Chang, Wei Ling ; Meng, Chin-Chun ; Yang, Shih Der et al. / 0.18 μm SiGe BiCMOS microwave/millimeter-wave dual-mode dual-conversion receiver architecture with a tunable RF channel selection at low-flicker-noise microwave mode. 2017 IEEE MTT-S International Microwave Symposium, IMS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1778-1780 (IEEE MTT-S International Microwave Symposium Digest).

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title = "0.18 μm SiGe BiCMOS microwave/millimeter-wave dual-mode dual-conversion receiver architecture with a tunable RF channel selection at low-flicker-noise microwave mode",

abstract = "A dual-mode receiver architecture with tens-MHz channel bandwidth at microwave mode and GHz channel bandwidth at millimeter-wave mode is demonstrated in this work with a tunable active filter for RF channel selection at microwave mode using 0.18 μm SiGe BiCMOS technology. A dual conversion is employed to accommodate the wide-channel-bandwidth 60-GHz mode at the first conversion stage and the high-level-modulation 5-GHz mode is merged to the second conversion stage through sharing the 5-GHz switchable Gilbert IQ mixers with the 60-GHz mode. A tunable RF active filter is inserted between the 5-GHz LNA and the second stage mixer to serve as RF channel selection at the 5-GHz mode with the ability of relaxing the stringent linearity requirement imposed by high-level-modulation scheme. 10 dB gain with a 2-GHz channel bandwidth at the 60-GHz mode and 23 dB gain with a 20 MHz channel bandwidth within the 600 MHz tuning range at 5-GHz mode are demonstrated with a low-flicker-noise corner of less than 60 KHz at the 5-GHz mode because of the use of SiGe HBT as the IQ Gilbert mixer cores at the second conversion stage.",

keywords = "Dual-conversion, Dual-mode, Q-enhanced active filter, RF channel selection, Schottky diode, SiGe BiCMOS",

author = "Chang, {Wei Ling} and Chin-Chun Meng and Yang, {Shih Der} and Huang, {Guo Wei}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE MTT-S International Microwave Symposium, IMS 2017 ; Conference date: 04-06-2017 Through 09-06-2017",

year = "2017",

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doi = "10.1109/MWSYM.2017.8058992",

language = "English",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Chang, WL, Meng, C-C, Yang, SD & Huang, GW 2017, 0.18 μm SiGe BiCMOS microwave/millimeter-wave dual-mode dual-conversion receiver architecture with a tunable RF channel selection at low-flicker-noise microwave mode. in 2017 IEEE MTT-S International Microwave Symposium, IMS 2017., 8058992, IEEE MTT-S International Microwave Symposium Digest, Institute of Electrical and Electronics Engineers Inc., pp. 1778-1780, 2017 IEEE MTT-S International Microwave Symposium, IMS 2017, Honololu, United States, 4/06/17. https://doi.org/10.1109/MWSYM.2017.8058992

0.18 μm SiGe BiCMOS microwave/millimeter-wave dual-mode dual-conversion receiver architecture with a tunable RF channel selection at low-flicker-noise microwave mode. / Chang, Wei Ling; Meng, Chin-Chun; Yang, Shih Der et al.
2017 IEEE MTT-S International Microwave Symposium, IMS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1778-1780 8058992 (IEEE MTT-S International Microwave Symposium Digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chang, Wei Ling

AU - Meng, Chin-Chun

AU - Yang, Shih Der

AU - Huang, Guo Wei

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N2 - A dual-mode receiver architecture with tens-MHz channel bandwidth at microwave mode and GHz channel bandwidth at millimeter-wave mode is demonstrated in this work with a tunable active filter for RF channel selection at microwave mode using 0.18 μm SiGe BiCMOS technology. A dual conversion is employed to accommodate the wide-channel-bandwidth 60-GHz mode at the first conversion stage and the high-level-modulation 5-GHz mode is merged to the second conversion stage through sharing the 5-GHz switchable Gilbert IQ mixers with the 60-GHz mode. A tunable RF active filter is inserted between the 5-GHz LNA and the second stage mixer to serve as RF channel selection at the 5-GHz mode with the ability of relaxing the stringent linearity requirement imposed by high-level-modulation scheme. 10 dB gain with a 2-GHz channel bandwidth at the 60-GHz mode and 23 dB gain with a 20 MHz channel bandwidth within the 600 MHz tuning range at 5-GHz mode are demonstrated with a low-flicker-noise corner of less than 60 KHz at the 5-GHz mode because of the use of SiGe HBT as the IQ Gilbert mixer cores at the second conversion stage.

AB - A dual-mode receiver architecture with tens-MHz channel bandwidth at microwave mode and GHz channel bandwidth at millimeter-wave mode is demonstrated in this work with a tunable active filter for RF channel selection at microwave mode using 0.18 μm SiGe BiCMOS technology. A dual conversion is employed to accommodate the wide-channel-bandwidth 60-GHz mode at the first conversion stage and the high-level-modulation 5-GHz mode is merged to the second conversion stage through sharing the 5-GHz switchable Gilbert IQ mixers with the 60-GHz mode. A tunable RF active filter is inserted between the 5-GHz LNA and the second stage mixer to serve as RF channel selection at the 5-GHz mode with the ability of relaxing the stringent linearity requirement imposed by high-level-modulation scheme. 10 dB gain with a 2-GHz channel bandwidth at the 60-GHz mode and 23 dB gain with a 20 MHz channel bandwidth within the 600 MHz tuning range at 5-GHz mode are demonstrated with a low-flicker-noise corner of less than 60 KHz at the 5-GHz mode because of the use of SiGe HBT as the IQ Gilbert mixer cores at the second conversion stage.

KW - Dual-conversion

KW - Dual-mode

KW - Q-enhanced active filter

KW - RF channel selection

KW - Schottky diode

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M3 - Conference contribution

AN - SCOPUS:85032480700

T3 - IEEE MTT-S International Microwave Symposium Digest

SP - 1778

EP - 1780

BT - 2017 IEEE MTT-S International Microwave Symposium, IMS 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2017 IEEE MTT-S International Microwave Symposium, IMS 2017

Y2 - 4 June 2017 through 9 June 2017

ER -

Chang WL, Meng CC, Yang SD, Huang GW. 0.18 μm SiGe BiCMOS microwave/millimeter-wave dual-mode dual-conversion receiver architecture with a tunable RF channel selection at low-flicker-noise microwave mode. In 2017 IEEE MTT-S International Microwave Symposium, IMS 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1778-1780. 8058992. (IEEE MTT-S International Microwave Symposium Digest). doi: 10.1109/MWSYM.2017.8058992

0.18 μm SiGe BiCMOS microwave/millimeter-wave dual-mode dual-conversion receiver architecture with a tunable RF channel selection at low-flicker-noise microwave mode

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