0.15 μm T-shaped gate fabrication for GaAs MODFET using phase shift lithography

Hiroshi Takenaka*, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

A new fabrication process of GaAs MODFET's with 0.15 micron T-shaped gate has been developed by using phase shift lithography. Sub-quarter micron footprints of T-shaped gates are defined as line patterns by PEL (pattern-edge line) method using chemically stable positive photoresist. Parasitic capacitances such as Cgs and Cgd are also reduced by the airgap incorporated in the present process. An implemented GaAs MODFET exhibited the NF of 0.36 dB and the gain of 11.5 dB at the frequency of 12 GHz.

Original languageEnglish
Pages (from-to)238-244
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume43
Issue number2
DOIs
StatePublished - 1 Dec 1996

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