0.15-μm RF CMOS technology compatible with logic CMOS for low-voltage operation

Masanobu Saito, Mizuki Ono*, Ryuichi Fujimoto, Hiroshi Tanimoto, Nobuyuki Ito, Takashi Yoshitomi, Tatsuya Ohguro, Hisayo Sasaki Momose, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

53 Scopus citations

Abstract

Radio Frequency (RF) CMOS is expected to replace bipolar and GaAs MESFET's in RF front-end IC's for mobile telecommunications devices in the near future. In order for the RF CMOS to be popularly used in this application, compatibility of its process for high-speed logic CMOS and low supply voltage operation are important for low fabrication cost and low power consumption. In this paper, a 0.15-jum RF CMOS technology compatible with logic CMOS for lowvoltage operation is described. Because the fabrication process is the same as the high-speed logic CMOS, manufacturibility of this technology is excellent. Some of the passive elements can be integrated without changing the process and others can be integrated with the addition of a few optional processes. Mixed RF and logic CMOS devices in a one-chip LSI can be realized with relatively low cost. Excellent high-frequency characteristics of small geometry silicon MOSFET's with low-power supply voltage are demonstrated. Cutoff frequency of 42 GHz of nMOSFET's, which is almost the same level at that of general high-performance silicon bipolar transistors, was obtained. NMOSFET's maintained enough high cutoff frequency of 32 GHz even at extremely low supply voltage of 0.5 V. Moreover, it was confirmed that degradation of minimum noise figure for deep submicron MOSFET's with 0.5 V operation is sufficiently small compared with 2.0 V operation. These excellent high-frequency characteristics of small geometry silicon MOSFET's under lowvoltage operation are suitable for mobile telecommunications applications.

Original languageEnglish
Pages (from-to)737-742
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume45
Issue number3
DOIs
StatePublished - 1998

Keywords

  • Cutoff frequency
  • Low voltage
  • Minimum noise figure
  • MOSFET
  • Radio frequency

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