A delta-doped CMOS with on-field source/drain contacts is developed. After BF2 and As ion implantation for NMOS and PMOS regions, non-doped selective epitaxial channel layer is grown by UHV-CVD, and polysilicon S/D electrodes deposited on the field are connected with the epitaxial channel layer simultaneously. This structure can reduce the source/drain parasitic junction capacitance similar to that of SOI CMOS. The inverter speed of the delta-doped CMOS with on-field source/drain contacts are 30% faster than that of the conventional CMOS.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1 Jan 1996|
|Event||Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA|
Duration: 11 Jun 1996 → 13 Jun 1996