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0.12 μm raised gate/source/drain epitaxial channel NMOS technology
T. Ohguro*, H. Naruse, H. Sugaya, H. Kimijima, E. Morifuji, T. Yoshitomi, T. Morimoto, H. S. Momose, Y. Katsumata, H. Iwai
*Corresponding author for this work
Research output: Contribution to journal › Conference article › peer-review
16
Scopus
citations