0.12 μm raised gate/source/drain epitaxial channel NMOS technology

T. Ohguro*, H. Naruse, H. Sugaya, H. Kimijima, E. Morifuji, T. Yoshitomi, T. Morimoto, H. S. Momose, Y. Katsumata, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

16 Scopus citations

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