0.12 μm raised gate/source/drain epitaxial channel NMOS technology

T. Ohguro; H. Naruse; H. Sugaya; H. Kimijima; E. Morifuji; T. Yoshitomi; T. Morimoto; H. S. Momose; Y. Katsumata; H. Iwai

doi:10.1109/IEDM.1998.746506

0.12 μm raised gate/source/drain epitaxial channel NMOS technology

T. Ohguro^*, H. Naruse, H. Sugaya, H. Kimijima, E. Morifuji, T. Yoshitomi, T. Morimoto, H. S. Momose, Y. Katsumata, H. Iwai

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

16 Scopus citations

Abstract

We introduce a 0.12 μm nMOS technology with multi-Vth's for mixed high-speed digital and RF-analog applications. Though basically device parameter was determined by SIA roadmap, new structures such as undoped epitaxial channel and raised gate/source/drain were applied to a 0.12 μm nMOS. This device has high fT and low noise figure which are very important for RF analog circuit design. High Idrive/Ioff ratio for drain current was also realized.

Original language	English
Pages (from-to)	927-930
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1998.746506
State	Published - 1998
Event	Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 6 Dec 1998 → 9 Dec 1998

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title = "0.12 μm raised gate/source/drain epitaxial channel NMOS technology",

abstract = "We introduce a 0.12 μm nMOS technology with multi-Vth's for mixed high-speed digital and RF-analog applications. Though basically device parameter was determined by SIA roadmap, new structures such as undoped epitaxial channel and raised gate/source/drain were applied to a 0.12 μm nMOS. This device has high fT and low noise figure which are very important for RF analog circuit design. High Idrive/Ioff ratio for drain current was also realized.",

author = "T. Ohguro and H. Naruse and H. Sugaya and H. Kimijima and E. Morifuji and T. Yoshitomi and T. Morimoto and Momose, {H. S.} and Y. Katsumata and H. Iwai",

year = "1998",

doi = "10.1109/IEDM.1998.746506",

language = "English",

pages = "927--930",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 06-12-1998 Through 09-12-1998",

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TY - JOUR

T1 - 0.12 μm raised gate/source/drain epitaxial channel NMOS technology

AU - Ohguro, T.

AU - Naruse, H.

AU - Sugaya, H.

AU - Kimijima, H.

AU - Morifuji, E.

AU - Yoshitomi, T.

AU - Morimoto, T.

AU - Momose, H. S.

AU - Katsumata, Y.

AU - Iwai, H.

PY - 1998

Y1 - 1998

N2 - We introduce a 0.12 μm nMOS technology with multi-Vth's for mixed high-speed digital and RF-analog applications. Though basically device parameter was determined by SIA roadmap, new structures such as undoped epitaxial channel and raised gate/source/drain were applied to a 0.12 μm nMOS. This device has high fT and low noise figure which are very important for RF analog circuit design. High Idrive/Ioff ratio for drain current was also realized.

AB - We introduce a 0.12 μm nMOS technology with multi-Vth's for mixed high-speed digital and RF-analog applications. Though basically device parameter was determined by SIA roadmap, new structures such as undoped epitaxial channel and raised gate/source/drain were applied to a 0.12 μm nMOS. This device has high fT and low noise figure which are very important for RF analog circuit design. High Idrive/Ioff ratio for drain current was also realized.

UR - http://www.scopus.com/inward/record.url?scp=0032276255&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1998.746506

DO - 10.1109/IEDM.1998.746506

M3 - Conference article

AN - SCOPUS:0032276255

SN - 0163-1918

SP - 927

EP - 930

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

Y2 - 6 December 1998 through 9 December 1998

ER -

0.12 μm raised gate/source/drain epitaxial channel NMOS technology

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