0.0354mm2 82μW 125KS/s 3-axis readout circuit for capacitive MEMS accelerometer

Kelvin Yi Tse Lai; Zih Cheng He; Yu Tao Yang; Hsie-Chia Chang; Chen-Yi Lee

doi:10.1109/ASSCC.2013.6690994

0.0354mm² 82μW 125KS/s 3-axis readout circuit for capacitive MEMS accelerometer

Kelvin Yi Tse Lai, Zih Cheng He, Yu Tao Yang, Hsie-Chia Chang, Chen-Yi Lee

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

In this paper, we propose a power/area-efficient capacitive readout circuit for the Micro-Electro-Mechanical Systems (MEMS) sensor of 3-axis accelerometer. The proposed architecture is different from other traditional structures by exploiting true capacitive-to-digital converter (CDC) without Analog-to-Digital Converter (ADC). The proposed CDC can differentiate the bidirectional 125KS/s 80-level accelerations between ±8g and support the 4-level adjustable resolutions of 0.1g/0.2g/0.4g/0.8g for each axis. The proposed readout circuit with 0.0354mm² area is fabricated in UMC 0.18um CMOS-MEMS process. Experimental results show power consumption is 50uW with 1.8V supply voltage for 1-axis (FOM=3.84pJ), 82uW for 3-axis (FOM=2.1pJ) under 125KHz of sampling frequency and 0.1g acceleration sensitivity for 0.2fF MEMS capacitance change.

Original language	English
Title of host publication	Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013
Pages	109-112
Number of pages	4
DOIs	https://doi.org/10.1109/ASSCC.2013.6690994
State	Published - 1 Dec 2013
Event	2013 9th IEEE Asian Solid-State Circuits Conference, A-SSCC 2013 - Singapore, Singapore Duration: 11 Nov 2013 → 13 Nov 2013

Publication series

Name	Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013

Conference

Conference	2013 9th IEEE Asian Solid-State Circuits Conference, A-SSCC 2013
Country/Territory	Singapore
City	Singapore
Period	11/11/13 → 13/11/13

Access to Document

10.1109/ASSCC.2013.6690994

Cite this

Lai, K. Y. T., He, Z. C., Yang, Y. T., Chang, H.-C., & Lee, C.-Y. (2013). 0.0354mm² 82μW 125KS/s 3-axis readout circuit for capacitive MEMS accelerometer. In Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013 (pp. 109-112). Article 6690994 (Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013). https://doi.org/10.1109/ASSCC.2013.6690994

@inproceedings{e8773a6fbc04420eb2fe1bfccf52a50b,

title = "0.0354mm2 82μW 125KS/s 3-axis readout circuit for capacitive MEMS accelerometer",

abstract = "In this paper, we propose a power/area-efficient capacitive readout circuit for the Micro-Electro-Mechanical Systems (MEMS) sensor of 3-axis accelerometer. The proposed architecture is different from other traditional structures by exploiting true capacitive-to-digital converter (CDC) without Analog-to-Digital Converter (ADC). The proposed CDC can differentiate the bidirectional 125KS/s 80-level accelerations between ±8g and support the 4-level adjustable resolutions of 0.1g/0.2g/0.4g/0.8g for each axis. The proposed readout circuit with 0.0354mm2 area is fabricated in UMC 0.18um CMOS-MEMS process. Experimental results show power consumption is 50uW with 1.8V supply voltage for 1-axis (FOM=3.84pJ), 82uW for 3-axis (FOM=2.1pJ) under 125KHz of sampling frequency and 0.1g acceleration sensitivity for 0.2fF MEMS capacitance change.",

author = "Lai, {Kelvin Yi Tse} and He, {Zih Cheng} and Yang, {Yu Tao} and Hsie-Chia Chang and Chen-Yi Lee",

year = "2013",

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day = "1",

doi = "10.1109/ASSCC.2013.6690994",

language = "English",

isbn = "9781479902781",

series = "Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013",

pages = "109--112",

booktitle = "Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013",

note = "2013 9th IEEE Asian Solid-State Circuits Conference, A-SSCC 2013 ; Conference date: 11-11-2013 Through 13-11-2013",

}

Lai, KYT, He, ZC, Yang, YT, Chang, H-C & Lee, C-Y 2013, 0.0354mm² 82μW 125KS/s 3-axis readout circuit for capacitive MEMS accelerometer. in Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013., 6690994, Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013, pp. 109-112, 2013 9th IEEE Asian Solid-State Circuits Conference, A-SSCC 2013, Singapore, Singapore, 11/11/13. https://doi.org/10.1109/ASSCC.2013.6690994

0.0354mm² 82μW 125KS/s 3-axis readout circuit for capacitive MEMS accelerometer. / Lai, Kelvin Yi Tse; He, Zih Cheng; Yang, Yu Tao et al.
Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013. 2013. p. 109-112 6690994 (Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - In this paper, we propose a power/area-efficient capacitive readout circuit for the Micro-Electro-Mechanical Systems (MEMS) sensor of 3-axis accelerometer. The proposed architecture is different from other traditional structures by exploiting true capacitive-to-digital converter (CDC) without Analog-to-Digital Converter (ADC). The proposed CDC can differentiate the bidirectional 125KS/s 80-level accelerations between ±8g and support the 4-level adjustable resolutions of 0.1g/0.2g/0.4g/0.8g for each axis. The proposed readout circuit with 0.0354mm2 area is fabricated in UMC 0.18um CMOS-MEMS process. Experimental results show power consumption is 50uW with 1.8V supply voltage for 1-axis (FOM=3.84pJ), 82uW for 3-axis (FOM=2.1pJ) under 125KHz of sampling frequency and 0.1g acceleration sensitivity for 0.2fF MEMS capacitance change.

AB - In this paper, we propose a power/area-efficient capacitive readout circuit for the Micro-Electro-Mechanical Systems (MEMS) sensor of 3-axis accelerometer. The proposed architecture is different from other traditional structures by exploiting true capacitive-to-digital converter (CDC) without Analog-to-Digital Converter (ADC). The proposed CDC can differentiate the bidirectional 125KS/s 80-level accelerations between ±8g and support the 4-level adjustable resolutions of 0.1g/0.2g/0.4g/0.8g for each axis. The proposed readout circuit with 0.0354mm2 area is fabricated in UMC 0.18um CMOS-MEMS process. Experimental results show power consumption is 50uW with 1.8V supply voltage for 1-axis (FOM=3.84pJ), 82uW for 3-axis (FOM=2.1pJ) under 125KHz of sampling frequency and 0.1g acceleration sensitivity for 0.2fF MEMS capacitance change.

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