Γ-X intervalley tunneling in InAs/AlSb resonant tunneling diodes

R. E. Carnahan; M. A. Maldonado; K. P. Martin; A. Nogaret; R. J. Higgins; L. A. Cury; D. K. Maude; J. C. Portal; Jenn-Fang Chen; A. Y. Cho

doi:10.1063/1.108687

Γ-X intervalley tunneling in InAs/AlSb resonant tunneling diodes

R. E. Carnahan^*, M. A. Maldonado, K. P. Martin, A. Nogaret, R. J. Higgins, L. A. Cury, D. K. Maude, J. C. Portal, Jenn-Fang Chen, A. Y. Cho

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

We present an experimental study of intravalley and intervalley transport in an InAs/AlSb/InAs/AlSb/InAs double barrier resonant tunneling diode at liquid helium temperatures. This work reports the first observation of intervalley tunneling through an InAs Γ-point quasibound state confined by AlSb X-point barriers. The incident energy of tunneling electrons was tuned by a transverse magnetic field (0<B<17 T). Self-consistent calculations of the current-voltage relation and a model that includes a transverse wave vector contribution to the magnetic field behavior of the resonances are used to describe the experimental results. From this, we determine that the device current is composed of Γ-point InAs electrons tunneling through X-point AlSb barriers (with large longitudinal effective mass) as well as Γ-point AlSb barriers.

Original language	English
Pages (from-to)	1385-1387
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	12
DOIs	https://doi.org/10.1063/1.108687
State	Published - 1 Dec 1993

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abstract = "We present an experimental study of intravalley and intervalley transport in an InAs/AlSb/InAs/AlSb/InAs double barrier resonant tunneling diode at liquid helium temperatures. This work reports the first observation of intervalley tunneling through an InAs Γ-point quasibound state confined by AlSb X-point barriers. The incident energy of tunneling electrons was tuned by a transverse magnetic field (0",

author = "Carnahan, {R. E.} and Maldonado, {M. A.} and Martin, {K. P.} and A. Nogaret and Higgins, {R. J.} and Cury, {L. A.} and Maude, {D. K.} and Portal, {J. C.} and Jenn-Fang Chen and Cho, {A. Y.}",

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AU - Carnahan, R. E.

AU - Maldonado, M. A.

AU - Martin, K. P.

AU - Nogaret, A.

AU - Higgins, R. J.

AU - Cury, L. A.

AU - Maude, D. K.

AU - Portal, J. C.

AU - Chen, Jenn-Fang

AU - Cho, A. Y.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - We present an experimental study of intravalley and intervalley transport in an InAs/AlSb/InAs/AlSb/InAs double barrier resonant tunneling diode at liquid helium temperatures. This work reports the first observation of intervalley tunneling through an InAs Γ-point quasibound state confined by AlSb X-point barriers. The incident energy of tunneling electrons was tuned by a transverse magnetic field (0

AB - We present an experimental study of intravalley and intervalley transport in an InAs/AlSb/InAs/AlSb/InAs double barrier resonant tunneling diode at liquid helium temperatures. This work reports the first observation of intervalley tunneling through an InAs Γ-point quasibound state confined by AlSb X-point barriers. The incident energy of tunneling electrons was tuned by a transverse magnetic field (0

UR - http://www.scopus.com/inward/record.url?scp=0004367887&partnerID=8YFLogxK

U2 - 10.1063/1.108687

DO - 10.1063/1.108687

M3 - Article

AN - SCOPUS:0004367887

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VL - 62

SP - 1385

EP - 1387

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Γ-X intervalley tunneling in InAs/AlSb resonant tunneling diodes

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