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Gate Tunneling Current, Mobility, and Random Telegraph Signals As Test Vehicles of The Physical Mechanisms in Strained FinFETs and Planar MOSFETs with Metal Gate High-k Dielectrics
Chen, Ming-Jer
(PI)
Institute of Electronics
Overview
Project Details
Status
Finished
Effective start/end date
1/08/13
→
31/07/14
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