Yi-Ming Li

Projects

Projects per year 2008 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023

• 20 Finished

Projects per year

Search results

• Finished

  垂直堆疊全閘極奈米片互補式場效應電晶體特性擾動及其機器學習建模之研究

  Li, Y.-M. (PI)

  1/08/22 → 31/07/23

  Project: Government Ministry › Other Government Ministry Institute

• A世代技術節點之先進高密度/高性能電晶體開發(2/2)

  Li, Y.-M. (PI)

  1/08/22 → 30/04/23

  Project: Government Ministry › Other Government Ministry Institute

• A世代技術節點之先進高密度/高性能電晶體開發(1/2)

  Li, Y.-M. (PI)

  1/11/21 → 31/10/22

  Project: Government Ministry › Other Government Ministry Institute

• Characteristic Fluctuation of Gate-All-Around MOSFETs and Negative Capacitance FETs and Their Modeling via Deep-Learning Methodology

  Li, Y.-M. (PI)

  1/08/21 → 31/07/22

  Project: Government Ministry › Other Government Ministry Institute

• Characteristic Fluctuations of 3D Vertically Stacked Multi- Channels Gate-All-Around Nanowire/Nanosheet MOSFETs and Negative Capacitance FETs with Multi-Domains Ferroelectric Materials and Their Implications on Advanced CMOS Circuits

  Li, Y.-M. (PI)

  1/08/20 → 31/07/21

  Project: Government Ministry › Other Government Ministry Institute

• Characteristic Fluctuation of the Advanced Nanometer-Scale Gate- All-Around Nanowire MOSFETs and Negative Capacitance FETs with Ferroelectric Materials and Its Implication on Dynamic Operation of CMOS Circuits

  Li, Y.-M. (PI)

  1/08/19 → 31/07/20

  Project: Government Ministry › Other Government Ministry Institute

• DC/AC and Dynamic Characteristic Fluctuations of 5-nm Gate-All- Around Nanowire MOSFET Devices and CMOS Circuits Induced by Process Variation Effect and Intrinsic Random Fluctuation

  Li, Y.-M. (PI)

  1/08/18 → 31/07/19

  Project: Government Ministry › Other Government Ministry Institute

• Model Auto Extraction of Compact Models for VLSI Devices: Methodology and Implementation (1)(2)

  Li, Y.-M. (PI)

  1/08/18 → 30/09/19

  Project: Government Ministry › Other Government Ministry Institute

• Electrical Characteristic Variability of Sub-7-nm Gate-All-Around Nanowire MOSFET Devices and Circuits Induced by Various Sources of Process Variation and Random Fluctuation

  Li, Y.-M. (PI)

  1/08/17 → 31/07/18

  Project: Government Ministry › Other Government Ministry Institute

• Model Auto Extraction of Compact Models for VLSI Devices:Methodology and Implementation (1)(2)

  Li, Y.-M. (PI)

  1/08/17 → 31/07/18

  Project: Government Ministry › Other Government Ministry Institute

• Automatic Parameter Extraction of Compact Models for VLSI Devices: Methodology and Implementation

  Li, Y.-M. (PI)

  1/08/16 → 31/07/17

  Project: Government Ministry › Other Government Ministry Institute

• Process Variation Effect and Intrinsic Parameter Fluctuation of Sub-1 0-nm Gate-All-Around Nanowire MOSFET Devices and Its Implication on Timing Fluctuation of CMOS Circuits

  Li, Y.-M. (PI)

  1/08/16 → 31/07/17

  Project: Government Ministry › Other Government Ministry Institute

• Electrical Characteristic and Power Consumption Fluctuations of Gate-All-Around Nanowire MOSFET Devices and Circuits Induced by Intrinsic Parameter Fluctuation

  Li, Y.-M. (PI)

  1/08/15 → 31/07/16

  Project: Government Ministry › Other Government Ministry Institute

• Characteristic Fluctuation of 10-nm-Gate Gate-All-Around Nanowire MOSFETs Induced by Process Variation and Intrinsic Parameter Fluctuation

  Li, Y.-M. (PI)

  1/08/14 → 31/07/15

  Project: Government Ministry › Other Government Ministry Institute

• Process Variation Effect and Intrinstic Parameter Fluctuation in Sub-16-nm-Gate Multi-Channel Bulk FinFETs and Gate-All-Around FETs

  Li, Y.-M. (PI)

  1/08/13 → 31/07/14

  Project: Government Ministry › Other Government Ministry Institute

• Combined Random Discrete Dopant (RDD), Random Interface Trap (RIT) and Random Work Function (RWF) Fluctuations in 16-nm-Gate 3D High-k/Metal Gate FinFET Devices and Circuits

  Li, Y.-M. (PI)

  1/08/12 → 31/07/13

  Project: Government Ministry › Other Government Ministry Institute

• Random Work Function in Characteristic Fluctuation of 16-nm High-k/ Metal-Gate Devices Induced by Nanosized Grains of Metal Gate

  Li, Y.-M. (PI)

  1/08/11 → 31/07/12

  Project: Government Ministry › Other Government Ministry Institute

• Intrinsic-Parameter Fluctuations in Nanoscale Planar and FinFET CMOS Technologies

  Li, Y.-M. (PI)

  1/08/10 → 31/07/11

  Project: Government Ministry › Other Government Ministry Institute

• 16奈米矽多重閘極電晶體中隨機摻雜導致之特性擾動及其抑制方法(2/2)

  Li, Y.-M. (PI)

  1/08/09 → 31/07/10

  Project: Government Ministry › Other Government Ministry Institute

• 16奈米矽多重閘極電晶體中隨機摻雜導致之特性擾動及其抑制方法(1/2)

  Li, Y.-M. (PI)

  1/08/08 → 31/07/09

  Project: Government Ministry › Other Government Ministry Institute