Personal profile
Research Interests
Semiconductor Physics and Devices, Optoelectronics Near-field Emission Microscopy, Nanostructures.
Experience
1990-1998 Associate Professor, Department of Electrophysics, National Chiao Tung University
1998-present Professor, Department of Electrophysics, National Chiao Tung University
Education/Academic qualification
PhD, Electrical Engineering, State University of New York at Buffalo
External positions
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- 1 Similar Profiles
Projects
- 17 Finished
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Development Of Advanced Epitaxial Techniques For Long-Wavelength Nitride-Based Light Emitting Devices By Two-Heator MOCVD Reactor(3/3)
Chen, W.-K. (PI)
1/06/15 → 31/12/16
Project: Government Ministry › Other Government Ministry Institute
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Development Of Advanced Epitaxial Techniques For Long-Wavelength Nitride-Based Light Emitting Devices By Two-Heator MOCVD Reactor(2/3)
Chen, W.-K. (PI)
1/06/14 → 31/08/15
Project: Government Ministry › Other Government Ministry Institute
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Studies of Physical Properties of High in Content InGaN Quantum Structure Grown by MOCVD
Chen, W.-K. (PI)
1/08/13 → 31/07/14
Project: Government Ministry › Other Government Ministry Institute
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Development of Advanced Epitaxial Techniques for Long-Wavelength Nitride-Based Light Emitting
Chen, W.-K. (PI)
1/06/13 → 31/08/14
Project: Government Ministry › Other Government Ministry Institute
-
Studies of Physical Properties of High in Content InGaN Quantum Structure Grown by MOCVD
Chen, W.-K. (PI)
1/08/12 → 31/07/13
Project: Government Ministry › Other Government Ministry Institute
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化学气相生长装置
Chen, W.-K. (Inventor) & 程峻宏 (Inventor), 5 Feb 2021, Patent No. CN109207962BResearch output: Patent
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Incorporation behaviors of in and ga in the two-heater MOVPE growth of inGaN films
Fu, S. F., Cheng, C. H., Lee, F. W., Chen, S. Y., Liao, B. W., Chou, W.-C., Chen, W.-K. & Ke, W. C., 2016, In: ECS Journal of Solid State Science and Technology. 5, 6, p. P335-P339Research output: Contribution to journal › Article › peer-review
Open Access1 Scopus citations -
Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates
Lee, F. W., Ke, W. C., Cheng, C. H., Liao, B. W. & Chen, W.-K., 1 Jul 2016, In: Applied Surface Science. 375, p. 223-229 7 p.Research output: Contribution to journal › Article › peer-review
17 Scopus citations -
InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate
Ke, W. C., Lee, F. W., Chiang, C. Y., Liang, Z. Y., Chen, W.-K. & Seong, T. Y., 21 Dec 2016, In: ACS Applied Materials and Interfaces. 8, 50, p. 34520-34529 10 p.Research output: Contribution to journal › Article › peer-review
29 Scopus citations