Engineering & Materials Science
Vapor phase epitaxy
100%
Hydrides
53%
Metallorganic chemical vapor deposition
52%
Sapphire
50%
Substrates
48%
Semiconductor quantum wells
41%
Photoluminescence
37%
Thick films
35%
Etching
32%
Light emitting diodes
31%
Buffer layers
29%
Wet etching
29%
Growth temperature
29%
Deep level transient spectroscopy
24%
Defects
22%
Temperature
22%
Organometallics
21%
Hydrogen
18%
Bending (forming)
16%
Ohmic contacts
15%
Doping (additives)
14%
X ray diffraction
14%
Organic chemicals
13%
Full width at half maximum
12%
Epitaxial films
12%
Metals
12%
Transmission electron microscopy
11%
Crystals
11%
Activation energy
11%
Epitaxial growth
11%
Nucleation
10%
Molecular beam epitaxy
10%
Reflection high energy electron diffraction
10%
Chemical vapor deposition
10%
Cracks
10%
Epilayers
10%
Blue shift
10%
Scanning electron microscopy
9%
Plasmas
9%
Nitrogen plasma
9%
Multilayers
9%
Metallorganic vapor phase epitaxy
9%
Inductively coupled plasma
9%
Strain relaxation
8%
Tunnels
8%
Low pressure chemical vapor deposition
8%
Carrier concentration
8%
Pulsed laser deposition
8%
Vacancies
7%
Plasma etching
7%
Physics & Astronomy
vapor phase epitaxy
66%
metalorganic chemical vapor deposition
49%
hydrides
39%
sapphire
33%
etching
27%
thick films
26%
light emitting diodes
24%
quantum wells
21%
traps
19%
buffers
16%
photoluminescence
16%
defects
16%
ultraviolet radiation
15%
hydrogen
15%
molecular beam epitaxy
15%
low pressure
14%
temperature
12%
cracks
11%
spectroscopy
11%
wafers
11%
aluminum gallium arsenides
11%
arsenic
11%
profiles
11%
activation energy
10%
tunnels
10%
capacitance
10%
electric contacts
9%
nitrides
9%
varistors
9%
contact resistance
9%
chips
8%
getters
8%
diffraction
8%
caves
7%
nucleation
7%
flat surfaces
7%
barrier layers
7%
Taiwan
7%
crystals
7%
transmission electron microscopy
7%
manufacturing
6%
majority carriers
6%
templates
6%
degradation
6%
x rays
6%
characterization
6%
high electron mobility transistors
6%
annealing
6%
gallium nitrides
6%
Chemical Compounds
Vapor Phase Epitaxy
48%
Etching
38%
Hydride
23%
Liquid Film
22%
Chemical Vapour Deposition
21%
Buffer Solution
15%
Surface
15%
Photoluminescence
14%
Interface Roughness
13%
Threading Dislocation
13%
Pressure
12%
Photoluminescence Spectrum
12%
Transmission Electron Microscopy
12%
Hydrogen
11%
Quantum-Confined Stark Effect
10%
Molecular Beam Epitaxy
9%
Epitaxial Film
9%
Lattice Constant
8%
Nucleation
8%
Reflection High Energy Electron Diffraction
8%
Metallorganic Chemical Vapour Deposition
8%
Crystal Point Defect
7%
Strain
7%
Stacking Fault
7%
Energy
6%
Multilayer
6%
Pulsed Laser Deposition
6%
Silicon Dioxide
6%
Epitaxial Growth
6%
Nitrogen
6%
Subband
6%
Application
5%
Dissociation
5%
Ambient Reaction Temperature
5%
Superlattice
5%
Surface Roughness
5%
Inductively Coupled Plasma
5%
X-Ray Diffraction
5%