Calculated based on number of publications stored in Pure and citations from Scopus
Calculated based on number of publications stored in Pure and citations from Scopus
Calculated based on number of publications stored in Pure and citations from Scopus
19992023

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  • 2021

    Standards for the Characterization of Endurance in Resistive Switching Devices

    Lanza, M., Waser, R., Ielmini, D., Yang, J. J., Goux, L., Suñe, J., Kenyon, A. J., Mehonic, A., Spiga, S., Rana, V., Wiefels, S., Menzel, S., Valov, I., Villena, M. A., Miranda, E., Jing, X., Campabadal, F., Gonzalez, M. B., Aguirre, F., Palumbo, F., & 16 othersZhu, K., Roldan, J. B., Puglisi, F. M., Larcher, L., Hou, T. H., Prodromakis, T., Yang, Y., Huang, P., Wan, T., Chai, Y., Pey, K. L., Raghavan, N., Dueñas, S., Wang, T., Xia, Q. & Pazos, S., 23 Nov 2021, In: ACS Nano. 15, 11, p. 17214-17231 18 p.

    Research output: Contribution to journalReview articlepeer-review

    Open Access
    46 Scopus citations
  • 2019

    Recommended Methods to Study Resistive Switching Devices

    Lanza, M., Wong, H. S. P., Pop, E., Ielmini, D., Strukov, D., Regan, B. C., Larcher, L., Villena, M. A., Yang, J. J., Goux, L., Belmonte, A., Yang, Y., Puglisi, F. M., Kang, J., Magyari-Köpe, B., Yalon, E., Kenyon, A., Buckwell, M., Mehonic, A., Shluger, A., & 34 othersLi, H., Hou, T-H., Hudec, B., Akinwande, D., Ge, R., Ambrogio, S., Roldan, J. B., Miranda, E., Suñe, J., Pey, K. L., Wu, X., Raghavan, N., Wu, E., Lu, W. D., Navarro, G., Zhang, W., Wu, H., Li, R., Holleitner, A., Wurstbauer, U., Lemme, M. C., Liu, M., Long, S., Liu, Q., Lv, H., Padovani, A., Pavan, P., Valov, I., Jing, X., Han, T., Zhu, K., Chen, S., Hui, F. & Shi, Y., 1 Jan 2019, In: Advanced Electronic Materials. 5, 1, 1800143.

    Research output: Contribution to journalReview articlepeer-review

    Open Access
    340 Scopus citations
  • 2016

    3D resistive RAM cell design for high-density storage class memory—a review

    Hudec, B., Hsu, C. W., Wang, I. T., Lai, W. L., Chang, C. C., Wang, T., Fröhlich, K., Ho, C. H., Lin, C. H. & Hou, T-H., 1 Jun 2016, In: Science China Information Sciences. 59, 6, 21 p., 061403.

    Research output: Contribution to journalReview articlepeer-review

    42 Scopus citations