拓宏 侯

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Tuo-Hung Hou

Professor

 https://orcid.org/0000-0002-9686-7076
Calculated based on number of publications stored in Pure and citations from Scopus
Calculated based on number of publications stored in Pure and citations from Scopus
Calculated based on number of publications stored in Pure and citations from Scopus
19992024

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  • 2004

    Effects of base oxide in HfSiO/SiO2 high-k gate stacks

    Wu, W. H., Chen, M. C., Wang, M. F., Hou, T.-H., Yao, L. G., Jin, Y., Chen, S. C. & Liang, M. S., 2004, p. 25-28. 4 p.

    Research output: Contribution to conference › Paper › peer-review

    2 Scopus citations
  • 2003

    Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

    Young, C. D., Kerber, A., Hou, T.-H., Cartier, E., Brown, G. A., Bersuker, G., Kim, Y., Lim, C., Gutt, J., Lysaght, P., Bennett, J., Lee, C. H., Gopalan, S., Gardner, M., Zeitzoff, P., Groeseneken, G., Murto, R. W. & Huff, H. R., Oct 2003, p. 347-359. 13 p.

    Research output: Contribution to conference › Paper › peer-review

    7 Scopus citations

  • Effect of deposition sequence and plasma treatment on ALCVD™ HfO 2 N-MOSFET properties

    Lim, C., Kim, Y., Hou, T.-H., Gutt, J., Marcus, S., Pomarede, C., Shero, E., De Waard, H., Werkhoven, C., Lee, C., Tamim, J., Chaudhary, N., Bersuker, G., Barnett, J., Young, C., Zeitzoff, P., Brown, G. A., Gardner, M., Murto, R. W. & Huff, H. R., 1 Dec 2003, p. 83-91. 9 p.

    Research output: Contribution to conference › Paper › peer-review

  • Non-contact electrical characterization of high-dielectric-constant (high-k) materials

    Hung, P. Y., Foran, B., Hou, T.-H., Diebold, A., Zhang, X. & Oroshiba, C., 2 Oct 2003, p. 219-225. 7 p.

    Research output: Contribution to conference › Paper › peer-review

  • Sub-nanometer high-k gate stack scaling using the HF-last/NH3 anneal interface

    Peterson, J. J., Barnett, J., Young, C. D., Hou, T.-H., Gutt, J., Gopalan, S., Lee, C. H., Li, H. J., Moumen, N., Chaudhary, N., Lee, B. H., Bersuker, G., Zeitzoff, P. M., Brown, G. A., Lysaght, P., Gardner, M., Murto, R. W. & Huff, H. R., Oct 2003, p. 93-99. 7 p.

    Research output: Contribution to conference › Paper › peer-review

  • 2002

    Improved scalability of high-k gate dielectrics by using hf-aluminates

    Hou, T.-H., Gutt, J., Lim, C., Marcus, S., Pomarede, C., Shero, E., De Warrd, H., Werkhoven, C., Gardner, M., Murto, R. W. & Huff, H. R., Oct 2002, p. 141-148. 8 p.

    Research output: Contribution to conference › Paper › peer-review

  • 2001

    Spike anneal qualification for 0.13 μm USJ technology on Radiance™ Centura®

    Sun, H. L., Jao, H. M., Huang, H. T., Pan, J. Y., Hou, T.-H., Chen, S., Ramamurthy, S., Chiao, E., Wilusz, D. & Chen, A., Sep 2001, p. 246-249. 4 p.

    Research output: Contribution to conference › Paper › peer-review

    1 Scopus citations