拓宏 侯

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Tuo-Hung Hou

Professor

 https://orcid.org/0000-0002-9686-7076
Calculated based on number of publications stored in Pure and citations from Scopus
Calculated based on number of publications stored in Pure and citations from Scopus
Calculated based on number of publications stored in Pure and citations from Scopus
19992024

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  • 2016

    Reliable high-voltage amorphous InGaZnO TFT for monolithic 3D integration

    Yu, M. J., Lin, R. P., Chang, Y. H. & Hou, T.-H., 25 Apr 2016, 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016. Institute of Electrical and Electronics Engineers Inc., p. 1-2 2 p. 7480525. (2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    1 Scopus citations

  • Suspended Ge gate-all-around nanowire nFETs with junction isolation on bulk Si

    Wan, C. C., Luo, G. L., Hsu, S. H., Hung, K. D., Chu, C. L., Hou, T.-H., Su, C. J., Chen, S. H., Wu, W. F. & Yeh, W. K., 13 Jun 2016, 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016. Institute of Electrical and Electronics Engineers Inc., p. 130-131 2 p. 7578017. (2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  • 2015

    A Study of Blocking and Tunnel Oxide Engineering on Double-Trapping (DT) BE-SONOS Performance

    Lo, R., Du, P. Y., Hsu, T. H., Wu, C. J., Guo, J. Y., Cheng, C. M., Lue, H. T., Shih, Y. H., Hou, T.-H., Hsieh, K. Y. & Lu, C. Y., 17 May 2015, 2015 IEEE 7th International Memory Workshop, IMW 2015. Institute of Electrical and Electronics Engineers Inc., p. 1-4 4 p. 7150273. (2015 IEEE 7th International Memory Workshop, IMW 2015).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    2 Scopus citations

  • Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four {111} facets by dry etch technology

    Lee, Y. J., Hou, F. J., Chuang, S. S., Hsueh, F. K., Kao, K. H., Sung, P. J., Yuan, W. Y., Yao, J. Y., Lu, Y. C., Lin, K. L., Wu, C. T., Chen, H. C., Chen, B. Y., Huang, G. W., Chen, H. J. H., Li, J. Y., Li, Y.-M., Samukawa, S., Chao, T. S. & Tseng, T. Y. & 3 others, Wu, W. F., Hou, T. H. & Yeh, W. K., 7 Dec 2015, 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., p. 15.1.1-15.1.4 4 p. 7409701. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2016-February).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    17 Scopus citations

  • Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping

    Lin, C. P., Lyu, L. S., Lin, C. T., Liu, P. S., Chang, W.-H., Li, L. J. & Hou, T.-H., 29 Jun 2015, Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc., p. 476-479 4 p. 7224436. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; vol. 2015-August).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    3 Scopus citations

  • Neuromorphic pattern learning using HBM electronic synapse with excitatory and inhibitory plasticity

    Chou, T., Liu, J. C., Chiu, L. W., Wang, I. T., Tsai, C.-M. & Hou, T.-H., 3 Jun 2015, 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015. Institute of Electrical and Electronics Engineers Inc., 7117582. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings; vol. 2015-June).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    3 Scopus citations
  • 2014

    Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe2

    Liu, P. S., Chen, C. H., Hsu, W. T., Lin, C. P., Lin, T. P., Chi, L. J., Chang, C. Y., Wu, S. C., Chang, W.-H., Li, L. J. & Hou, T.-H., 15 Dec 2014, 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc., Vol. 2015-February. p. 5.7.1-5.7.4 4 p. 7046992. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    1 Scopus citations

  • Improved multi-level control of RRAM using pulse-train programming

    Zhao, L., Chen, H. Y., Wu, S. C., Jiang, Z., Yu, S., Hou, T.-H., Wong, H. S. P. & Nishi, Y., 28 Apr 2014, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society, p. 1-2 2 p. 6839673. (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    14 Scopus citations

  • Investigating MLC variation of filamentary and non-filamentary RRAM

    Liu, J. C., Wang, I. T., Hsu, C. W., Luo, W. C. & Hou, T.-H., 28 Apr 2014, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society, p. 1-2 2 p. 6839684. (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    3 Scopus citations
  • 2013

    3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current

    Hsu, C. W., Wan, C. C., Wang, I. T., Chen, M. C., Lo, C. L., Lee, Y. J., Jang, W. Y., Lin, C. H. & Hou, T.-H., Dec 2013, 2013 IEEE International Electron Devices Meeting, IEDM 2013. IEEE, p. 10.4.1-10.4.4 4 p. 6724601. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    15 Scopus citations

  • Design and optimization methodology for 3D RRAM arrays

    Deng, Y., Chen, H. Y., Gao, B., Yu, S., Wu, S. C., Zhao, L., Chen, B., Jiang, Z., Liu, X., Hou, T.-H., Nishi, Y., Kang, J. & Wong, H. S. P., 9 Dec 2013, 2013 IEEE International Electron Devices Meeting, IEDM 2013. p. 25.7.1-25.7.4 4 p. 6724693. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    34 Scopus citations

  • Low-cost embedded RRAM technology for system-on-plastic integration using a-IGZO TFTs

    Hou, T.-H., Wu, S. C., Yu, M. J., Liu, P. S. & Chi, L. J., 4 Jul 2013, Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013. p. 71-74 4 p. 6617780. (Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    1 Scopus citations

  • On the potential of CRS, 1D1R, and 1S1R crossbar RRAM for storage-class memory

    Lo, C. L., Chen, M. C., Huang, J. J. & Hou, T.-H., 22 Apr 2013, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. p. 1-2 2 p. 6545588. (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    7 Scopus citations

  • Self-rectifying bipolar TaOx/TiO2 RRAM with superior endurance over 1012 cycles for 3D high-density storage-class memory

    Hsu, C. W., Wang, I. T., Lo, C. L., Chiang, M. C., Jang, W. Y., Lin, C. H. & Hou, T.-H., 11 Jun 2013, 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers. p. T166-T167 2 p. 6576643. (Digest of Technical Papers - Symposium on VLSI Technology).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    120 Scopus citations
  • 2012

    Logic/resistive-switching hybrid transistor for two-bit-per-cell storage

    Wu, S. C., Lo, C. & Hou, T.-H., 2012, 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers. 6210103. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  • Multi-bit-per-Cell a-IGZO TFT resistive-switching memory for system-on-plastic applications

    Wu, S. C., Feng, H. T., Yu, M. J., Wang, I. T. & Hou, T.-H., 10 Dec 2012, 2012 IEEE International Electron Devices Meeting, IEDM 2012. p. 5.3.1-5.3.4 4 p. 6478983. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    5 Scopus citations

  • RRAM SET speed-disturb dilemma and rapid statistical prediction methodology

    Luo, W. C., Liu, J. C., Feng, H. T., Lin, Y. C., Huang, J. J., Lin, K. L. & Hou, T.-H., 10 Dec 2012, 2012 IEEE International Electron Devices Meeting, IEDM 2012. p. 9.5.1-9.5.4 4 p. 6479012. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    19 Scopus citations
  • 2011

    High-performance Ni/SiO 2 /Si programmable metallization cell

    Lin, K. L., Tseng, Y. M., Lin, J. H., Shieh, J., Lee, Y. J., Hou, T.-H. & Lei, T. F., 26 Sep 2011, 4th IEEE International NanoElectronics Conference, INEC 2011. 5991718. (Proceedings - International NanoElectronics Conference, INEC).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    1 Scopus citations

  • Improvement of polycrystalline silicon thin-film transistors with nickel-titanium oxide by sol-gel spin-coating and nitrogen implantation

    Wu, S. C., Hou, T.-H., Chuang, S. H., Chao, T.-S. & Lei, T. F., 2011, 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 6135386. (2011 International Semiconductor Device Research Symposium, ISDRS 2011).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  • Low-I RESET unipolar HfO 2 RRAM and tunable resistive-switching mode via interface engineering

    Lin, K. L., Hou, T.-H., Lee, Y. J., Lin, J. H., Chang, J. W., Shieh, J., Chou, C. T., Chang, W. H., Jang, W. Y. & Lin, C. H., 1 Dec 2011, 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 6135404. (2011 International Semiconductor Device Research Symposium, ISDRS 2011).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    2 Scopus citations

  • One selector-one resistor (1S1R) crossbar array for high-density flexible memory applications

    Huang, J. J., Tseng, Y. M., Luo, W. C., Hsu, C. W. & Hou, T.-H., 2011, 2011 International Electron Devices Meeting, IEDM 2011. p. 31.7.1-31.7.4 6131653. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    104 Scopus citations
  • 2010

    Low power nonvolatile SRAM circuit with integrated low voltage nanocrystal PMOS Flash

    Rajwade, S., Yu, W. K., Xu, S., Hou, T.-H., Suh, G. E. & Kan, E., 1 Dec 2010, Proceedings - IEEE International SOC Conference, SOCC 2010. p. 461-466 6 p. 5784679. (Proceedings - IEEE International SOC Conference, SOCC 2010).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    4 Scopus citations
  • 2009

    3D finite-element analysis of metal nanocrystal memories variations

    Shaw, J. T., Hou, T.-H., Raza, H. & Kan, E. C., 2009, Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009. 5091077. (Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  • Room-temperature TiOx oxide diode for 1D1R resistance-switching memory

    Huang, J. J., Lin, G. L., Kuo, C. W., Chang, W. C. & Hou, T.-H., 1 Dec 2009, 2009 International Semiconductor Device Research Symposium, ISDRS '09. 5378323. (2009 International Semiconductor Device Research Symposium, ISDRS '09).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    5 Scopus citations
  • 2008

    Flash memory scaling: From material selection to performance improvement

    Hou, T.-H., Lee, J., Shaw, J. T. & Kan, E. C., Mar 2008, Materials Research Society Symposium Proceedings - Materials Science and Technology for Nonvolatile Memories. Materials Research Society, p. 3-15 13 p. (Materials Research Society Symposium Proceedings; vol. 1071).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    3 Scopus citations

  • Heterogeneous integration of molecules in nonvolatile memory

    Hou, T.-H., Raza, H., Afshari, K., Ruebusch, D. J. & Kan, E. C., 2008, 66th DRC Device Research Conference Digest, DRC 2008. p. 275-276 2 p. 4800836. (Device Research Conference - Conference Digest, DRC).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    1 Scopus citations

  • Material and electrical characterization of stackable planar polysilicon TFT flash memory cell with metal nanocrystals and high-k dielectrics

    Lee, J., Cha, J. J., Barron, S. C., Muller, D. A., Van Dover, R. B., Amponsah, E. K., Hou, T.-H., Raza, H. & Kan, E. C., 2008, 2008 IEEE International SOI Conference Proceedings. p. 39-40 2 p. 4656284. (Proceedings - IEEE International SOI Conference).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    2 Scopus citations

  • Planar polysilicon TFT low-voltage flash memory cell with A1 2 O 3 tunnel dielectric and (Ti,Dy)0 control dielectric for three-dimensional integration

    Lee, J., Barron, S. C., Van Dover, R. B., Kwame Amponsah, E., Hou, T.-H., Raza, H. & Kan, E. C., 2008, 66th DRC Device Research Conference Digest, DRC 2008. p. 279-280 2 p. 4800838. (Device Research Conference - Conference Digest, DRC).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  • 2007

    Modeling of multi-layer nanocrystal memory

    Hou, T.-H., Lee, C. & Kan, L. C., 2007, 65th DRC Device Research Conference. p. 221-222 2 p. 4373727. (65th DRC Device Research Conference).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    4 Scopus citations
  • 2006

    Effects of metal nanocrystals and traps in tunneling rate measurements in metal nanocrystal based carbon nanotube memory

    Ganguly, U., Hou, T.-H. & Kan, E., 2006, Nanowires and Carbon Nanotubes: Science and Applications. Materials Research Society, p. 295-300 6 p. (Materials Research Society Symposium Proceedings; vol. 963).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  • Process integration of composite high-k tunneling dielectric for nanocrystal based carbon nanotube memory

    Ganguly, U., Hou, T.-H. & Kan, E. C., 2006, Nanostructured and Patterned Materials for Information Storage. Materials Research Society, p. 183-188 6 p. (Materials Research Society Symposium Proceedings; vol. 961).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  • 2005

    Metal nanocrystal/nitride heterogeneous-stack floating gate memory

    Lee, C., Hou, T.-H. & Kan, E. C., 2005, 63rd Device Research Conference Digest, DRC'05. p. 97-98 2 p. 1553073. (Device Research Conference - Conference Digest, DRC; vol. 2005).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    5 Scopus citations
  • 2004

    Direct determination of interface and bulk traps in stacked HfO2 dielectrics using charge pumping method

    Hou, T.-H., Wang, M. F., Mai, K. L., Lin, Y. M., Yang, M. H., Yao, L. G., Jin, Y., Chen, S. C. & Liang, M. S., 12 Jul 2004, 2004 IEEE International Reliability Physics Symposium Proceedings - 42nd Annual, IRPS 2004. January ed. Institute of Electrical and Electronics Engineers Inc., Vol. 2004-January. p. 581-582 2 p. 1315399. (IEEE International Reliability Physics Symposium Proceedings; vol. 2004-January, no. January).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    5 Scopus citations

  • Electrical performance improvement in SiO2/HfSiO high-k gate stack for advanced low power device application

    Wang, M. F., Hou, T.-H., Mai, K. L., Lim, P. S., Yao, L. G., Jin, Y., Chen, S. C., Liang, M. S., Wu, W. H., Ou, S. C., Chen, M. C. & Huang, T. Y., 2004, 2004 International Conference on Integrated Circuit Design and Technology, ICICDT. p. 283-286 4 p. (2004 International Conference on Integrated Circuit Design and Technology, ICICDT).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    3 Scopus citations

  • Low power device technology with SiGe channel, HfSiON, and poly-Si gate

    Wang, H. C. H., Chen, S. J., Wang, M. F., Tsai, P. Y., Tsai, C. W., Wang, T. W., Ting, S. M., Hou, T.-H., Lim, P. S., Lin, H. J., Jin, Y., Tao, H. J., Chen, S. C., Diaz, C. H., Liang, M. S. & Hu, C.-M., 1 Dec 2004, IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST. IEEE, p. 161-164 4 p. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    20 Scopus citations

  • Stress memorization technique (SMT) by selectively strained-nitride capping for sub-65nm high-performance strained-Si device application

    Chen, C. H., Lee, T. L., Hou, T.-H., Chen, C. L., Chen, C. C., Hsu, J. W., Cheng, K. L., Chiu, Y. H., Tao, H. J., Jin, Y., Diaz, C. H., Chen, S. C. & Liang, M. S., 1 Oct 2004, 2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS. IEEE, p. 56-57 2 p. (Digest of Technical Papers - Symposium on VLSI Technology).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    138 Scopus citations
  • 2001

    Integration of high-k gate stack systems into planar CMOS process flows

    Huff, H. R., Agarwal, A., Kim, Y., Perrymore, L., Riley, D., Barnett, J., Sparks, C., Freiler, M., Gebara, G., Bowers, B., Chen, P. J., Lysaght, P., Nguyen, B., Lim, J. E., Lim, S., Bersuker, G., Zeitzoff, P., Brown, G. A., Young, C. & Foran, B. & 13 others, Shaapur, F., Hou, T.-H., Lim, C., Alshareef, H., Borthakur, S., Derro, D. J., Bergmann, R., Larson, L. A., Gardner, M. I., Gutt, J., Murto, R. W., Torres, K. & Jackson, M. D., 2001, Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001. Institute of Electrical and Electronics Engineers Inc., p. 2-11 10 p. 967538. (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

    19 Scopus citations