Keyphrases
Resistive Random Access Memory (ReRAM)
99%
HfO2
80%
Rutile
53%
Ultrathin
46%
Amorphous InGaZnO (a-IGZO)
44%
Non-volatile Memory
44%
Resistive Switching
42%
High Density
41%
Gate Stack
40%
Metal Nanocrystals
37%
Silica
36%
Gate Dielectric
34%
High Performance
30%
TaOx
30%
Nanocrystals
29%
Nanocrystal Memory
27%
Crossbar Array
27%
Transistor
27%
Nitrides
26%
Antiferroelectric
26%
Annealing
25%
In-memory
25%
Interfacial Layer
25%
Low Voltage
24%
Field-effect Transistors
24%
Spin-transfer Torque Magnetic RAM (STT-MRAM)
22%
Synaptic Device
22%
Self-rectifying
21%
Poly-Si
21%
Equivalent Oxide Thickness
21%
Energy Efficient
21%
Dielectric
21%
Molybdenite
20%
Oxides
20%
MoTe2
20%
Memristor
20%
Ferroelectric Tunnel Junction
20%
High-k Dielectric
19%
High-k Gate Dielectrics
19%
Low Power
19%
Memory Window
19%
High-k Gate Stack
18%
Solid-phase Crystallization
18%
Bipolar Resistive Switching
18%
Room Temperature
18%
Device Performance
18%
Low-voltage Operation
18%
Memory Device
18%
In-memory Computing
18%
Metal-ferroelectric-metal
17%
Engineering
Resistive
100%
Gate Dielectric
41%
Engineering
36%
Gate Stack
32%
Tunnel
32%
Silicon Dioxide
31%
Nonvolatile Memory
30%
Random Access Memory
29%
Low-Temperature
29%
Dielectrics
29%
Two Dimensional
26%
Resistive Random Access Memory
26%
Field-Effect Transistor
24%
Thin-Film Transistor
22%
Interfacial Layer
22%
Oxide Thickness
20%
Polysilicon
19%
Tunnel Construction
18%
Metal Nanocrystals
17%
Nanowire
17%
Electrostatic Force
17%
Array Size
17%
Cross Point
14%
Field Effect Transistor
14%
Annealing Temperature
14%
Operating Voltage
14%
Nodes
13%
Artificial Intelligence
12%
Storage-Class Memory
12%
Oxygen Vacancy
12%
Device Structure
12%
Reliability Availability and Maintainability (Reliability Engineering)
12%
Constant Voltage
11%
Electric Field
11%
Chemical Vapor Deposition
11%
Retention Time
10%
Deep Neural Network
10%
Random Number
10%
Thin Films
10%
Deep Learning Method
10%
SPICE
10%
Device Performance
9%
Molybdenum Disulfide
9%
Metal-Oxide-Semiconductor Field-Effect Transistor
9%
Carrier Mobility
9%
Atomic Layer Deposition
9%
Flash Memory
9%
Finite Element Analysis
9%
Side Wall
9%
Process Flow
8%
