Keyphrases
Resistive Random Access Memory (ReRAM)
99%
HfO2
83%
Rutile
55%
Amorphous InGaZnO (a-IGZO)
46%
Non-volatile Memory
46%
Resistive Switching
43%
High Density
42%
Gate Stack
41%
Ultrathin
40%
Metal Nanocrystals
38%
Silica
38%
Gate Dielectric
36%
High Performance
31%
TaOx
31%
Nanocrystals
30%
Nanocrystal Memory
28%
Crossbar Array
28%
Transistor
28%
Nitrides
27%
Antiferroelectric
27%
Low Voltage
25%
Field-effect Transistors
25%
Annealing
25%
Interfacial Layer
24%
Spin-transfer Torque Magnetic RAM (STT-MRAM)
23%
Synaptic Device
23%
In-memory
22%
Self-rectifying
22%
Poly-Si
22%
Equivalent Oxide Thickness
22%
Dielectric
21%
Molybdenite
21%
Oxides
21%
MoTe2
21%
Memristor
20%
High-k Dielectric
20%
High-k Gate Dielectrics
20%
Low Power
20%
High-k Gate Stack
19%
Solid-phase Crystallization
19%
Ferroelectric Tunnel Junction
19%
Bipolar Resistive Switching
19%
Room Temperature
19%
Memory Window
19%
Device Performance
19%
Low-voltage Operation
18%
Memory Device
18%
In-memory Computing
18%
Resistors
17%
Ferroelectric Field-effect Transistor (FeFET)
17%
Engineering
Resistive
100%
Gate Dielectric
42%
Engineering
38%
Silicon Dioxide
34%
Gate Stack
33%
Nonvolatile Memory
30%
Random Access Memory
30%
Dielectrics
30%
Two Dimensional
27%
Resistive Random Access Memory
27%
Field-Effect Transistor
25%
Energy Engineering
23%
Oxide Thickness
23%
Thin-Film Transistor
23%
Low-Temperature
22%
Tunnel Construction
21%
Electrostatic Force
20%
Polysilicon
20%
Metal Nanocrystals
18%
Nanowire
18%
Interfacial Layer
18%
Cross Point
17%
Array Size
16%
Field Effect Transistor
15%
Operating Voltage
14%
Nodes
13%
Artificial Intelligence
13%
Storage-Class Memory
12%
Oxygen Vacancy
12%
Device Structure
12%
Reliability Availability and Maintainability (Reliability Engineering)
12%
Constant Voltage
12%
Chemical Vapor Deposition
11%
Retention Time
11%
Deep Neural Network
11%
Random Number
11%
Thin Films
10%
Electric Field
10%
Deep Learning Method
10%
Nitride
10%
Device Performance
10%
Molybdenum Disulfide
10%
Metal-Oxide-Semiconductor Field-Effect Transistor
10%
Carrier Mobility
9%
Atomic Layer Deposition
9%
Band Gap
9%
Side Wall
9%
Array Architecture
9%
Flash Memory
9%
Process Flow
9%
