Keyphrases
AlGaN-GaN
100%
P-GaN
89%
High Electron Mobility Transistor
88%
GaN HEMT
66%
Metal-insulator-semiconductor
61%
Enhancement-mode (E-mode)
61%
GaN-on-Si
59%
On-resistance
53%
P-GaN Gate
51%
4H-SiC
43%
MIS-HEMT
43%
Recessed Gate
41%
Gate Dielectric
37%
Time-dependent Dielectric Breakdown
37%
Threshold Voltage
35%
Gate Bias
35%
Gate Leakage Current
35%
Threshold Voltage Shift
34%
GaN MIS-HEMT
31%
Breakdown Voltage
25%
AlGaN Barrier
24%
Metal-ferroelectric-metal-insulator-semiconductor (MFMIS)
24%
Gate Voltage
24%
Ferroelectric Field-effect Transistor (FeFET)
23%
Plasma-enhanced Atomic Layer Deposition (PEALD)
23%
GaN-based
23%
Activation Energy
23%
D-mode
22%
Au-free
22%
Gate Stress
22%
Capacitors
21%
Gate Leakage
20%
GaN Power Device
19%
Gallium Nitride
18%
Comprehensive Investigation
18%
Schottky Barrier Diode
17%
Ga2O3
17%
Ferroelectric Devices
17%
Drain Bias
17%
In Situ
17%
Hf0.5Zr0.5O2
16%
Detrapping
16%
Aluminum Gallium Nitride (AlGaN)
16%
Aluminum Oxide
15%
Leakage Current
15%
Silicon Nitride
15%
Off-state
14%
Interfacial Layer
14%
GaN-based MIS-HEMTs
13%
Metal-insulator-semiconductor Field-effect Transistor (MISFET)
13%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
69%
Dielectrics
67%
Gate Bias
61%
Gate Dielectric
55%
Nitride
34%
Drain Bias
34%
Breakdown Voltage
33%
Activation Energy
29%
Gate Voltage
28%
Interface State
26%
Field Effect Transistor
22%
Constant Time
22%
Power Device
22%
Interfacial Layer
21%
Transients
21%
Current Drain
19%
Device Performance
18%
Field-Effect Transistor
17%
Failure Mechanism
16%
Hot Electron
15%
Simulation Result
15%
Heterojunctions
15%
Gate Oxide
13%
Schottky Barrier Diode
13%
Gamma-Ray Irradiation
13%
Deconvolution
13%
Gate Length
13%
Temperature Range
13%
Experimental Result
12%
Subthreshold Slope
12%
Stress State
11%
Electric Field
11%
Two Dimensional
11%
Gamma Ray
11%
Tunnel Construction
11%
Dielectric Layer
10%
Silicon Dioxide
10%
Passivation
9%
Heterostructures
9%
Constant Voltage
9%
High Electric Field
9%
Differential Mode
8%
Indium-Tin-Oxide
8%
Gate Electrode
8%
Reliability Assessment
8%
Human Body Model
8%
Si Substrate
8%
Dynamic Performance
8%
Current Source
8%
Noise Performance
8%
