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Keyphrases
AlGaN-GaN
100%
High Electron Mobility Transistor
89%
P-GaN
88%
GaN HEMT
77%
GaN-on-Si
72%
MIS-HEMT
64%
Metal-insulator-semiconductor
60%
Enhancement-mode (E-mode)
60%
On-resistance
60%
P-GaN Gate
52%
Threshold Voltage
45%
4H-SiC
43%
Recessed Gate
41%
Time-dependent Dielectric Breakdown
39%
Gate Dielectric
38%
Gate Bias
35%
Threshold Voltage Shift
35%
Gate Leakage Current
35%
GaN MIS-HEMT
34%
Breakdown Voltage
30%
Ferroelectric Field-effect Transistor (FeFET)
28%
GaN-based
27%
In Situ SiN
27%
Gate Stress
26%
Gate Voltage
26%
Capacitors
26%
D-mode
25%
AlGaN Barrier
24%
Metal-ferroelectric-metal-insulator-semiconductor (MFMIS)
24%
Plasma-enhanced Atomic Layer Deposition (PEALD)
23%
Off-state
23%
Activation Energy
23%
Gate Leakage
22%
Drain Current
22%
Au-free
22%
Gamma Irradiation
21%
Gate Breakdown
21%
Drain Bias
21%
Gallium Nitride
19%
GaN Power Device
19%
RF Performance
18%
Leakage Current
18%
Comprehensive Investigation
18%
Schottky Barrier Diode
17%
Ga2O3
17%
Ferroelectric Devices
17%
In Situ
17%
Aluminum Oxide
16%
Aluminum Gallium Nitride (AlGaN)
16%
Interface State Density
16%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
93%
Dielectrics
75%
Gate Bias
61%
Gate Dielectric
57%
Breakdown Voltage
41%
Nitride
38%
Drain Bias
35%
Gate Voltage
30%
Interface State
30%
Current Drain
30%
Activation Energy
29%
Field Effect Transistor
26%
Constant Time
22%
Schottky Barrier Diode
22%
Power Device
22%
Interfacial Layer
21%
Transients
20%
Hot Electron
19%
Device Performance
19%
Field-Effect Transistor
17%
Gate Length
17%
Failure Mechanism
17%
Stress State
16%
Gate Oxide
16%
Simulation Result
15%
Heterojunctions
15%
Passivation
14%
Temperature Range
14%
Gamma-Ray Irradiation
13%
Deconvolution
13%
Switching Loss
13%
Tunnel Construction
13%
Induced Stress
13%
Conduction Loss
13%
Bias Voltage
13%
Experimental Result
12%
Reverse Bias
12%
Electric Field
12%
Access Region
12%
Subthreshold Slope
12%
Two Dimensional
11%
Gamma Ray
11%
Annealing Temperature
11%
High Electric Field
11%
Pulse Test
10%
Artificial Neural Network
10%
Space Application
10%
SPICE
10%
Dielectric Layer
9%
Interface Trap
9%
