Projects per year
Personal profile
Research Interests
Power GaN and SiC semiconductor devices
Sub-5 nm beyond CMOS
Reliability evaluation and degradation mechanism analysis
AI-assisted device design and reliability prediction in advanced semiconductor technologies
Experience
2011/6 ~ 2016/7 Ph.D. researcher, imec, Belgium
2016/1 ~ 2016/3 Visiting researcher, IBM, USA
2016/8 ~ 2017/1 Research Scientist, imec, Belgium
2017/2 ~ 2021.08 Assistant Professor, International College of Semiconductor Technology, National Yang Ming Chiao Tung University / National Chiao Tung University
2021.08~ present Associate Professor, International College of Semiconductor Technology, National Yang Ming Chiao Tung University
2022.08~ present Vice Dean, International College of Semiconductor Technology, National Yang Ming Chiao Tung University
Education/Academic qualification
PhD, Electrical Engineering, KU Leuven
External positions
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Projects
- 7 Finished
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下世代高可靠度氮化鎵電子元件:矽製程兼容超越1000V氮化鎵功率元件開發、應用於太空惡劣環境氮化鎵功率元件探索及整合機器學習加速元件特性及可靠度優化(4/5)
1/02/22 → 31/01/23
Project: Government Ministry › Other Government Ministry Institute
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Next-generation Reliable GaN Electronics: CMOS Compatible Beyond 1000V GaN-on-Si Devices, Exploration Of The GaN Power Devices For Space Applications, And Machine Learning To Accelerate The Optimization Of The Characteristics And Reliability
1/02/21 → 31/01/22
Project: Government Ministry › Other Government Ministry Institute
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Next-generation Reliable GaN Electronics: CMOS Compatible Beyond 1000V GaN-on-Si Devices, Exploration Of The GaN Power Devices For Space Applications, And Machine Learning To Accelerate The Optimization Of The Characteristics And Reliability
1/02/20 → 31/01/21
Project: Government Ministry › Other Government Ministry Institute
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Next-generation Reliable GaN Electronics: CMOS Compatible Beyond 1000V GaN-on-Si Devices, Exploration of the GaN Power Devices for Space Applications, and Machine Learning to Accelerate the Optimization of the Characteristics and Reliability
1/02/19 → 31/01/20
Project: Government Ministry › Other Government Ministry Institute
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Electrical performance study of Schottky barrier diodes using ion implanted β-Ga2O3 epilayers grown on sapphire substrates
Sood, A., Wuu, D. S., Tarntair, F. G., Sao, N. T., Wu, T. L., Tumilty, N., Kuo, H. C., Pratap, S. J. & Horng, R. H., Mar 2023, In: Materials Today Advances. 17, 100346.Research output: Contribution to journal › Article › peer-review
Open Access1 Scopus citations -
Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs
Tang, S. W., Bakeroot, B., Huang, Z. H., Chen, S. C., Lin, W. S., Lo, T. C., Borga, M., Wellekens, D., Posthuma, N., Decoutere, S. & Wu, T. L., 1 Feb 2023, In: IEEE Transactions on Electron Devices. 70, 2, p. 449-453 5 p.Research output: Contribution to journal › Article › peer-review
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Capacitance-Dependent VTH Instability Under a High dVg/dt Event in p-GaN Power HEMTs
Tang, S. W., Lin, W. S., Huang, Z. H. & Wu, T. L., 1 Oct 2022, In: Ieee Electron Device Letters. 43, 10, p. 1617-1620 4 p.Research output: Contribution to journal › Article › peer-review
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Comprehensive Investigation of the Switching Stability in SiC and GaN Power Devices
Tang, S. W., Fan, C. T., Lin, M. C. & Wu, T. L., 2022, 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022. Institute of Electrical and Electronics Engineers Inc., (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; vol. 2022-July).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs
Abhinay, S., Wu, W. M., Shih, C. A., Chen, S. H., Sibaja-Hernandez, A., Parvais, B., Peralagu, U., Alian, A., Wu, T-L., Ker, M. D., Groeseneken, G. & Collaert, N., 2022, 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., p. 3071-3074 4 p. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2022-December).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review