Projects per year
Personal profile
Research Interests
Power GaN and SiC semiconductor devices
Sub-5 nm beyond CMOS
Reliability evaluation and degradation mechanism analysis
AI-assisted device design and reliability prediction in advanced semiconductor technologies
Experience
2024.08 – present Associate Professor, Institute of Electronics, NYCU
2024.08 – present Associate Professor, Department of Electronics and Electrical Engineering, NYCU
2023.08 – present Editor, Scientific Reports (Nature Journal)
2023.01 – present IEEE EDS Technical Committees on Compound Semiconductor Devices & Circuits
2023.01 – present IEEE EDS Technical Committees on Compact Modeling
2023.01 – present Distinguished Research Fellow, Industrial Technology Research Institute
2022.08 – present Joint Professor, Undergraduate Program of Nano science and Engineering, NYCU
2022.02 – present Joint Professor, Industrial Academy Innovation School, NYCU
2021.10 – present Executive Director, MOST “Next-generation compound semiconductor technologies”
2021.11 – present Trustee, Taiwan ESD Association
2019.09 – present Seeded Trainer, Center of Higher Education Accreditation for Teaching (HEAT)
2021.08 – present Associate Professor, International College of Semiconductor Technology, NYCU
2017.08 – present MediaTek Junior Chair Professor
2022.08 – 2023.02 Vice Dean, International College of Semiconductor Technology, NYCU
2021.02 – 2021.07 Assistant Professor, International College of Semiconductor Technology, NYCU
2017.02 – 2021.01 Assistant Professor, International College of Semiconductor Technology, NCTU
2016.08 – 2017.01 Research Scientist, Imec, Leuven, Belgium
2011.09 – 2016.07 Ph.D. researcher, Imec, Leuven, Belgium
2016.01 – 2016.03 Visiting researcher, IBM, NY, USA
Education/Academic qualification
PhD, Electrical Engineering, KU Leuven
External positions
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Collaborations and top research areas from the last five years
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Projects
- 7 Finished
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下世代高可靠度氮化鎵電子元件:矽製程兼容超越1000V氮化鎵功率元件開發、應用於太空惡劣環境氮化鎵功率元件探索及整合機器學習加速元件特性及可靠度優化(4/5)
Wu, T.-L. (PI)
1/02/22 → 31/01/23
Project: Government Ministry › Other Government Ministry Institute
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Next-generation Reliable GaN Electronics: CMOS Compatible Beyond 1000V GaN-on-Si Devices, Exploration Of The GaN Power Devices For Space Applications, And Machine Learning To Accelerate The Optimization Of The Characteristics And Reliability
Wu, T.-L. (PI)
1/02/21 → 31/01/22
Project: Government Ministry › Other Government Ministry Institute
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Next-generation Reliable GaN Electronics: CMOS Compatible Beyond 1000V GaN-on-Si Devices, Exploration Of The GaN Power Devices For Space Applications, And Machine Learning To Accelerate The Optimization Of The Characteristics And Reliability
Wu, T.-L. (PI)
1/02/20 → 31/01/21
Project: Government Ministry › Other Government Ministry Institute
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Next-generation Reliable GaN Electronics: CMOS Compatible Beyond 1000V GaN-on-Si Devices, Exploration of the GaN Power Devices for Space Applications, and Machine Learning to Accelerate the Optimization of the Characteristics and Reliability
Wu, T.-L. (PI)
1/02/19 → 31/01/20
Project: Government Ministry › Other Government Ministry Institute
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高壓高電流晶體閘流器之研究
Wu, T.-L. (PI)
1/01/19 → 30/04/19
Project: Government Ministry › Other Government Ministry Institute
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Effect of stress interruption on TDDB lifetime during constant voltage stressing in metal-ferroelectric-insulator-semiconductor ferroelectric devices
Tan, T. T., Wu, T. L., Liu, H. Y., Yu, C. Y., Shubhakar, K., Raghavan, N. & Pey, K. L., Feb 2025, In: Microelectronics Reliability. 165, 115584.Research output: Contribution to journal › Article › peer-review
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Investigation of DC and Low-Frequency Noise performance in GaN-on-Si Power MIS-HEMTs over a Temperature Range of 4 K to 420 K
Johari, A., Gupta, A., Wu, T. L. & Singh, R., 2025, (Accepted/In press) In: IEEE Journal of the Electron Devices Society.Research output: Contribution to journal › Article › peer-review
Open Access -
200mm GaN-on-Si E-Mode Power HEMTs with Epitaxially Grown p-AlN/p-GaN Gate to Enhance Gate Reliability
Huang, Z. H., Chang, C. H., Lo, T. C., Lee, Y. T., Lu, C. H., Wang, H. E., Tsai, Y. H., Cheng, Y. C., Huang, Y. J., Chou, C. W. & Wu, T. L., 2024, 2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 319-322 4 p. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
1 Scopus citations -
A Novel Gate Driver with Charge Sharing Technique to Optimize Gate Turn-On/Turn-Off Overshoot and Switching Loss Trade-off in SiC Power MOSFETs
Hsiao, Y. S., Yu, W. C., Sung, C., Lin, W. C., Hsiao, Y. K., Hung, C. L., Huang, Z. H., Kuo, H. C., Tu, C. C. & Wu, T. L., 2024, 2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 184-187 4 p. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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A Self-Consistent Approach Based on Bayesian Deconvolution for Trapping Time Constant Analysis: A Demonstration to Analyze ΔVTHTransients in p-GaN Gate Power HEMTs
Singh, S. K., Wu, T. L. & Chauhan, Y. S., 1 Mar 2024, In: IEEE Transactions on Electron Devices. 71, 3, p. 1820-1826 7 p.Research output: Contribution to journal › Article › peer-review
3 Scopus citations