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2005
Direct experimental evidence of the hole capture by resonant levels in boron doped silicon
Yen, S.-T., Tulupenko, V., Cheng, E. S., Dalakyan, A., Lee, C. P., Chao, K. A., Belykh, V., Abramov, A. & Ryzhkov, V., 30 Jun 2005, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. p. 1192-1193 2 p. (AIP Conference Proceedings; vol. 772).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review