Calculated based on number of publications stored in Pure and citations from Scopus
Calculated based on number of publications stored in Pure and citations from Scopus
Calculated based on number of publications stored in Pure and citations from Scopus
19942019

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  • 2005

    Direct experimental evidence of the hole capture by resonant levels in boron doped silicon

    Yen, S-T., Tulupenko, V., Cheng, E. S., Dalakyan, A., Lee, C. P., Chao, K. A., Belykh, V., Abramov, A. & Ryzhkov, V., 30 Jun 2005, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. p. 1192-1193 2 p. (AIP Conference Proceedings; vol. 772).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review