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Keyphrases
1-dB Compression Point
22%
65nm CMOS
21%
90-nm CMOS Technology
74%
Active Power Splitters
27%
Amplifier Design
36%
Capacitors
27%
Chip Size
24%
CMOS Mixer
18%
CMOS Process
50%
CMOS Receiver
39%
Complementary Metal Oxide Semiconductor
20%
Conversion Gain
43%
Drain Bias
22%
GaAs pHEMT Process
29%
Gain Cell
18%
IF Module
18%
Input Impedance
19%
Input Matching
32%
LNA Design
50%
Local Oscillator
28%
Low Noise Amplifier
50%
Matching Mechanism
18%
Millimeter Wave
26%
Mixer
38%
Mixer Design
18%
Noise Figure
45%
Noise Measurement
27%
Noise Parameter Measurements
27%
Noise Parameters
18%
Noise Temperature
51%
On-wafer
27%
Output Port
32%
Port Isolation
23%
Power Amplifier Design
27%
Power Consumption
22%
Power Output
18%
Radio
44%
Receiver chip
21%
Receiver Design
42%
Reflection Coefficient
25%
Room Temperature
36%
SIS Mixer
18%
Transistor
69%
Transmission Line
45%
Tripler
27%
W-band
54%
Wide IF Band
32%
Wideband
100%
Wideband LNA
21%
Wideband Low-noise Amplifier
33%
Engineering
Active Power
36%
Amplifier
70%
Balanced Mixer
11%
Balun
23%
Coherent Receiver
9%
Combiner
12%
Complementary Metal-Oxide-Semiconductor
20%
Conversion Gain
50%
Drain Bias
19%
Electric Lines
53%
Electric Power Utilization
37%
Energy Dissipation
16%
Equalizers
13%
Fiber Optics
9%
Form Expression
9%
Front End
9%
Fusion Plasmas
18%
Gallium Arsenide
41%
Harmonics
13%
Improvement Factor
12%
Input Impedance
23%
Input Noise
9%
Insertion Loss
9%
Intermediate Frequency
25%
Local Oscillator
19%
Low Noise Amplifier
69%
Measured Result
30%
Measurement Noise
16%
Measurement System
22%
Microwave Circuit
9%
Millimeter Wave
59%
Mixers (Machinery)
58%
Mobile Communication
13%
Noise Figure
51%
Output Phase
10%
Output Port
29%
Output Power
19%
Performance Deterioration
9%
Phase Imbalance
16%
Phase Locked Loop
9%
Plasma Diagnostics
18%
Power Amplifier
50%
Reflectance
29%
Room Temperature
46%
Sampling Window
9%
Simulated Result
14%
Simultaneous Detection
9%
Single Chip
10%
Stage Amplifier
9%
W-Band
59%
