Material Science
Thin-Film Transistor
100%
Film
49%
Oxide Compound
41%
Indium
29%
Silicon
29%
Dielectric Material
29%
Zinc Oxide
18%
Electrical Property
18%
Tungsten
16%
Permittivity
15%
Annealing
15%
Density
14%
Thin Films
14%
Silsesquioxane
13%
Nitride Compound
10%
Transistor
10%
Oxidation Reaction
10%
Gallium
9%
Nanowire
9%
Supercritical Fluid
8%
Amorphous Silicon
8%
Oxygen Vacancy
8%
Capacitance
7%
Tin Oxide
7%
Oxide Semiconductor
7%
Surface (Surface Science)
6%
ZnO
6%
Electronic Circuit
6%
Capacitor
6%
Germanium
6%
Memory Effect
5%
Metal Oxide
5%
Silicon Nitride
5%
Keyphrases
Thin-film Transistors
54%
Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs)
28%
Amorphous InGaZnO (a-IGZO)
27%
Oxide Thin-film Transistors
22%
A-Si
19%
Electrical Characteristics
19%
Non-volatile Memory
14%
Threshold Voltage
13%
Hydrogen Silsesquioxane
12%
High Performance
11%
Zinc Oxide Thin Films
10%
Passivation Layer
9%
Gate Driver
9%
Nanowire Channel
9%
Subthreshold Swing
9%
Leakage Current
9%
Annealing
9%
TFT-LCD
8%
Memory Device
8%
Plasma Treatment
8%
Indium Zinc Oxide
8%
Resistive Switching
8%
Low Dielectric Constant
8%
Conductive Bridging Random Access Memory (CBRAM)
7%
H TFT
7%
Oxygen Vacancy
7%
Supercritical Fluid
7%
Channel Layer
7%
Memory Application
7%
Resistive Random Access Memory (ReRAM)
7%
Low Temperature
7%
Nanocrystals
7%
Electrical Performance
7%
Active-matrix Organic Light-emitting Diode (AMOLED)
6%
Threshold Voltage Shift
6%
Memory Window
6%
Nitrided Oxide
6%
Amorphous Silicon Thin-film Transistors
6%
Room Temperature
6%
On-state Current
6%
InGaZnO Thin-film Transistors
6%
Field-effect Mobility
6%
Dielectric
6%
Charge Storage
6%
Oxide Nitride
6%
Oxides
5%
Indium Tungsten Oxide
5%
Electrical Properties
5%
High Mobility
5%
Silica
5%
Engineering
Thin-Film Transistor
80%
Polysilicon
22%
Low-Temperature
11%
Resistive
11%
Dielectrics
9%
Passivation Layer
8%
Conductive
7%
Thin Films
6%
Supercritical Fluid
6%
Random Access Memory
6%
Channel Layer
5%
Nonvolatile Memory
5%
Passivation
5%
High Resolution
5%
Oxide Semiconductor
5%
Liquid Crystal Display
5%
Nanowire
5%
Resistive Random Access Memory
5%
Metallizations
5%
Gate Dielectric
5%
Electrical Performance
5%