Calculated based on number of publications stored in Pure and citations from Scopus
Calculated based on number of publications stored in Pure and citations from Scopus
Calculated based on number of publications stored in Pure and citations from Scopus
1994 …2024

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  • 2015

    Anomalous electrostatics and intrinsic variability in GeOI p-MOSFET

    Yu, C. H. & Su, P., 4 Dec 2015, 2014 Silicon Nanoelectronics Workshop, SNW 2014. Institute of Electrical and Electronics Engineers Inc., 7348618. (2014 Silicon Nanoelectronics Workshop, SNW 2014).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Built-in effective body-bias effect in UTBB hetero-channel MOSFETs and its suppression

    Yu, C. H. & Su, P., 24 Sep 2015, 2015 Silicon Nanoelectronics Workshop, SNW 2015. Institute of Electrical and Electronics Engineers Inc., 7275307. (2015 Silicon Nanoelectronics Workshop, SNW 2015).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Electrostatic integrity and performance enhancement for UTB InGaAs-OI MOSFET with high-k dielectric through spacer design

    Hu, V. P. H., Sachid, A. B., Lo, C. T., Su, P. & Hu, C.-M., 3 Jun 2015, 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015. Institute of Electrical and Electronics Engineers Inc., 7117568. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings; vol. 2015-June).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    6 Scopus citations
  • Evaluation of 32-Bit carry-look-ahead adder circuit with hybrid tunneling FET and FinFET devices

    Wu, T. C., Chen, C. J., Chen, Y. N., Hu, V. P. H., Su, P. & Chuang, C. T., 23 Jul 2015, 2015 International Conference on IC Design and Technology, ICICDT 2015. Institute of Electrical and Electronics Engineers Inc., 7165880. (2015 International Conference on IC Design and Technology, ICICDT 2015).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Evaluation of TFET and FinFET devices and 32-Bit CLA circuits considering work function variation and line-edge roughness

    Chen, C. J., Chen, Y. N., Fan, M. L., Hu, V. P. H., Su, P. & Chuang, C. T., 27 Jul 2015, 2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015. Institute of Electrical and Electronics Engineers Inc., p. 2325-2328 4 p. 7169149. (Proceedings - IEEE International Symposium on Circuits and Systems; vol. 2015-July).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations
  • Impacts of NBTI and PBTI on ultra-thin-body GeOI 6T SRAM cells

    Hu, V. P. H., Fan, M. L., Su, P. & Chuang, C. T., 27 Jul 2015, 2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015. Institute of Electrical and Electronics Engineers Inc., p. 601-604 4 p. 7168705. (Proceedings - IEEE International Symposium on Circuits and Systems; vol. 2015-July).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    3 Scopus citations
  • Investigation and benchmark of intrinsic drain-induced-barrier-lowering (DIBL) for ultra-thin-body III-V-on-insulator n-MOSFETs

    Yu, C. H. & Su, P., 1 Jan 2015, IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., p. 666-669 4 p. 7388693. (IEEE-NANO 2015 - 15th International Conference on Nanotechnology).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • Investigation of quantum-capacitance induced drain-current loss for multi-gate InGaAs n-MOSFETs

    Shen, H. H., Yu, C. H. & Su, P., 3 Jun 2015, 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015. Institute of Electrical and Electronics Engineers Inc., 7117578. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings; vol. 2015-June).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Stability analysis for UTB GeOI 6T SRAM cells considering NBTI and PBTI

    Hu, V. P. H., Fan, M. L., Su, P. & Chuang, C. T., 3 Jun 2015, 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015. Institute of Electrical and Electronics Engineers Inc., 7117556. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings; vol. 2015-June).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • UTB GeOI 6T SRAM cell and sense amplifier considering BTI reliability

    Hu, V. P. H., Su, P. & Chuang, C. T., 25 Aug 2015, Proceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015. Institute of Electrical and Electronics Engineers Inc., p. 111-114 4 p. 7224345. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; vol. 2015-August).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    5 Scopus citations
  • 2014

    Evaluation of Read- and Write-Assist circuits for GeOI FinFET 6T SRAM cells

    Hu, P.-H., Fan, M. L., Su, P. & Chuang, C.-T., 1 Jan 2014, 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014. Institute of Electrical and Electronics Engineers Inc., p. 1122-1125 4 p. 6865337. (Proceedings - IEEE International Symposium on Circuits and Systems).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Impacts of work function variation and line-edge roughness on TFET and FinFET devices and logic circuits

    Chen, C. J., Chen, Y. N., Fan, M. L., Hu, V. P. H., Su, P. & Chuang, C. T., 30 Jan 2014, 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014. Institute of Electrical and Electronics Engineers Inc., 7028225. (2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2014).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    6 Scopus citations
  • Investigation and optimization of monolithic 3D logic circuits and SRAM cells considering interlayer coupling

    Fan, M. L., Hu, V. P. H., Chen, Y. N., Su, P. & Chuang, C. T., 2014, 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014. Institute of Electrical and Electronics Engineers Inc., p. 1130-1133 4 p. 6865339. (Proceedings - IEEE International Symposium on Circuits and Systems).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    3 Scopus citations
  • Stability/Performance Assessment of Monolithic 3D 6T/8T SRAM Cells Considering Transistor-Level Interlayer Coupling

    Fan, M. L., Hu, V. P. H., Chen, Y. N., Su, P. & Chuang, C. T., 1 Jan 2014, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society, 6839680. (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Ultra-low voltage mixed TFET-MOSFET 8T SRAM cell

    Chen, Y. N., Fan, M. L., Hu, V. P. H., Su, P. & Chuang, C. T., 2014, ISLPED 2014 - Proceedings of the 2014 International Symposium on Low Power Electronics and Design. Institute of Electrical and Electronics Engineers Inc., p. 255-258 4 p. (Proceedings of the International Symposium on Low Power Electronics and Design).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    7 Scopus citations
  • 2013

    Analysis of Germanium FinFET logic circuits and SRAMs with asymmetric gate to source/drain underlap devices

    Hu, V. P. H., Fan, M. L., Su, P. & Chuang, C. T., 12 Aug 2013, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. 6545633. (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Design and optimization of 6T SRAM using vertically stacked nanowire MOSFETs

    Tsai, M. F., Fan, M. L., Pao, C. H., Chen, Y. N., Hu, V. P. H., Su, P. & Chuang, C. T., 12 Aug 2013, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. 6545632. (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • Device design and analysis of logic circuits and SRAMs for Germanium FinFETs on SOI and bulk substrates

    Hu, V. P. H., Fan, M. L., Su, P. & Chuang, C. T., 2013, Proceedings of the 14th International Symposium on Quality Electronic Design, ISQED 2013. p. 347-352 6 p. 6523633. (Proceedings - International Symposium on Quality Electronic Design, ISQED).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations
  • Evaluation of transient voltage collapse write-assist for GeOI and SOI FinFET SRAM cells

    Hu, V. P. H., Fan, M. L., Su, P. & Chuang, C. T., 2013, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013. IEEE Computer Society, 6716539. (2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Impacts of single trap induced random telegraph noise on Si and Ge nanowire FETs, 6T SRAM cells and logic circuits

    Yang, S. Y., Chen, Y. N., Fan, M. L., Hu, V. P. H., Su, P. & Chuang, C. T., 9 Sep 2013, ICICDT 2013 - International Conference on IC Design and Technology, Proceedings. p. 61-64 4 p. 6563303. (ICICDT 2013 - International Conference on IC Design and Technology, Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • Investigation of backgate-bias dependence of intrinsic variability for UTB hetero-channel MOSFETs considering quantum confinement

    Yu, C. H. & Su, P., 2013, 71st Device Research Conference, DRC 2013 - Conference Digest. p. 61-62 2 p. 6633793. (Device Research Conference - Conference Digest, DRC).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • Investigation of single-trap-induced random telegraph noise for tunnel FET based devices, 8T SRAM cell, and sense amplifiers

    Fan, M. L., Hu, V. P. H., Chen, Y. N., Su, P. & Chuang, C. T., 2013, 2013 IEEE International Reliability Physics Symposium, IRPS 2013. p. CR.1.1-CR.1.5 6532068. (IEEE International Reliability Physics Symposium Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    9 Scopus citations
  • Source/drain series resistance induced feedback effect on drain current mismatch and its implication

    Kuo, J. J. Y., Fan, M. L., Lee, W. & Su, P., 12 Aug 2013, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. 6545637. (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • 2012

    A comparative analysis of tunneling FET circuit switching characteristics and SRAM stability and performance

    Chen, Y. N., Fan, M. L., Hu, P. H., Tsai, M. F., Pao, C. H., Su, P. & Chuang, C. T., 2012, 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012. p. 157-160 4 p. 6343357. (European Solid-State Device Research Conference).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    4 Scopus citations
  • A comprehensive comparative analysis of FinFET and Trigate device, SRAM and logic circuits

    Pao, C. H., Fan, M. L., Tsai, M. F., Chen, Y. N., Hu, V. P. H., Su, P. & Chuang, C. T., 1 Dec 2012, 2012 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2012. p. 463-466 4 p. 6419072. (IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations
  • Body effect induced variability in Bulk tri-gate MOSFETs

    Chiang, C. H., Fan, M. L., Kuo, J. J. Y. & Su, P., 16 Jul 2012, 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers. 6210130. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • Comparison of differential and large-signal sensing scheme for subthreshold/superthreshold FinFET SRAM considering variability

    Fan, M. L., Hu, V. P. H., Chen, Y. N., Su, P. & Chuang, C. T., 16 Jul 2012, 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers. 6210169. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations
  • Impacts of random telegraph noise on FinFET devices, 6T SRAM cell, and logic circuits

    Fan, M. L., Hu, V. P. H., Chen, Y. N., Su, P. & Chuang, C. T., 28 Sep 2012, 2012 IEEE International Reliability Physics Symposium, IRPS 2012. 6241886. (IEEE International Reliability Physics Symposium Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    7 Scopus citations
  • Impacts of random telegraph noise on the analog properties of FinFET and trigate devices and Widlar current source

    Pao, C. H., Fan, M. L., Tsai, M. F., Chen, Y. N., Hu, V. P. H., Su, P. & Chuang, C. T., 13 Aug 2012, ICICDT 2012 - IEEE International Conference on Integrated Circuit Design and Technology. 6232841. (ICICDT 2012 - IEEE International Conference on Integrated Circuit Design and Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    5 Scopus citations
  • Impacts of wire-LER on nanowire MOSFET devices, subthreshold SRAM and logic circuits

    Tsai, M. F., Lu, B. K., Fan, M. L., Pao, C. H., Chen, Y. N., Hu, V. P. H., Su, P. & Chuang, C. T., 16 Jul 2012, 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers. 6210116. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • Investigation of scalability for Ge and InGaAs channel multi-gate NMOSFETs

    Wu, Y. S., Chiang, C. H. & Su, P., 16 Jul 2012, 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers. 6210132. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    6 Scopus citations
  • Simulation of grain-boundary induced Vth variability in stackable NAND flash using a Voronoi approach

    Yang, C. W., Chao, S. H. & Su, P., 2012, 2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings, NVMTS 2012. p. 12-15 4 p. 6632851. (2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings, NVMTS 2012).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Stability and performance optimization of InGaAs-OI and GeOI hetero-channel SRAM cells

    Hu, V. P. H., Fan, M. L., Su, P. & Chuang, C. T., 11 Dec 2012, 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012. p. 77-80 4 p. 6343337. (European Solid-State Device Research Conference).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    3 Scopus citations
  • Variation tolerant CLSAs for nanoscale Bulk-CMOS and FinFET SRAM

    Tsai, M. F., Tsai, J. H., Fan, M. L., Su, P. & Chuang, C. T., 1 Dec 2012, 2012 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2012. p. 471-474 4 p. 6419074. (IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    9 Scopus citations
  • 2011

    Analysis of power-performance for Ultra-Thin-Body GeOI logic circuits

    Hu, V. P. H., Fan, M. L., Su, P. & Chuang, C. T., 2011, IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2011. p. 115-120 6 p. 5993622. (Proceedings of the International Symposium on Low Power Electronics and Design).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations
  • Beneficial effects of quantum confinement on Ge and InGaAs ultra-thin-body NMOSFETs

    Wu, Y. S., Hsieh, H. Y., Hu, V. P. H. & Su, P., 11 Jul 2011, Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. p. 30-31 2 p. 5872219. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Comprehensive analysis of UTB GeOI logic circuits and 6T SRAM cells considering variability and temperature sensitivity

    Hu, V. P. H., Fan, M. L., Su, P. & Chuang, C. T., 1 Dec 2011, 2011 International Electron Devices Meeting, IEDM 2011. 6131658. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    6 Scopus citations
  • Disturb-free Independently-controlled-Gate 7T FinFET SRAM cell

    Chen, Y. N., Hsieh, C. Y., Fan, M. L., Hu, V. P. H., Su, P. & Chuang, C. T., 11 Jul 2011, Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. p. 34-37 4 p. 5872221. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Impacts of intrinsic device variations on the stability of FinFET subthreshold SRAMs

    Chen, Y. N., Hsieh, C. Y., Fan, M. L., Hu, V. P. H., Su, P. & Chuang, C. T., 24 Jun 2011, 2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011. 5783210. (2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations
  • Impacts of single trap induced random telegraph noise on finfet devices and SRAM cell stability

    Fan, M. L., Hu, V. P. H., Chen, Y. N., Su, P. & Chuang, C. T., 2011, IEEE International SOI Conference, SOI 2011. 6081676. (Proceedings - IEEE International SOI Conference).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    6 Scopus citations
  • Investigation of electrostatic integrity for ultra-thin-body GeOI and InGaAs-OI n-MOSFETs considering quantum confinement

    Yu, C. H., Wu, Y. S., Hu, V. P. H. & Su, P., 26 Sep 2011, 4th IEEE International NanoElectronics Conference, INEC 2011. 5991651. (Proceedings - International NanoElectronics Conference, INEC).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Leakage-delay analysis of Ultra-Thin-Body GeOI devices and logic circuits

    Hu, V. P. H., Fan, M. L., Su, P. & Chuang, C. T., 11 Jul 2011, Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. p. 32-33 2 p. 5872220. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    6 Scopus citations
  • Self-heating induced feedback effect on drain current mismatch and its modeling

    Kuo, J. J. Y. & Su, P., 1 Dec 2011, 2011 International Electron Devices Meeting, IEDM 2011. 6131496. (Technical Digest - International Electron Devices Meeting, IEDM).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Temperature dependence of device mismatch and harmonic distortion in nanoscale uniaxial-strained pMOSFETs

    Kuo, J. J. Y., Chen, W. P. N. & Su, P., 24 Jun 2011, 2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011. 5783225. (2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations
  • Variability analysis of UTB SOI subthreshold SRAM considering Line-Edge Roughness, Work Function Variation and temperature sensitivity

    Hu, V. P. H., Fan, M. L., Su, P. & Chuang, C. T., 2011, 2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011. 5783189. (2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations
  • 2010

    Evaluation of static noise margin and performance of 6T FinFET SRAM cells with asymmetric gate to source/drain underlap devices

    Hu, V. P. H., Fan, M. L., Su, P. & Chuang, C. T., 30 Dec 2010, 2010 IEEE International SOI Conference, SOI 2010. 5641392. (Proceedings - IEEE International SOI Conference).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    10 Scopus citations
  • FinFET SRAM cell optimization considering temporal variability due to NBTI/PBTI and surface orientation

    Hu, V. P. H., Fan, M. L., Hsieh, C. Y., Su, P. & Chuang, C. T., 6 Dec 2010, 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010. p. 269-272 4 p. 5604510. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

  • Impact of surface orientation on Vth variability of FinFET

    Wu, Y. S., Fan, M. L. & Su, P., 22 Oct 2010, 2010 Silicon Nanoelectronics Workshop, SNW 2010. 5562562. (2010 Silicon Nanoelectronics Workshop, SNW 2010).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    4 Scopus citations
  • Independently-controlled-gate FinFET Schmitt trigger sub-threshold SRAMs

    Hsieh, C. Y., Fan, M. L., Hu, P.-H., Su, P. & Chuang, C.-T., 2010, 2010 IEEE International SOI Conference, SOI 2010. 5641375. (Proceedings - IEEE International SOI Conference).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations
  • Investigation of stability and AC performance of sub-threshold FinFET SRAM

    Fan, M. L., Wu, Y. S., Hu, V. P. H., Su, P. & Chuang, C. T., 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. p. 66-67 2 p. 5488946. (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Scopus citations