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Pin Su
Professor
Institute of Electronics
Center for Semiconductor Technology Research
https://orcid.org/0000-0002-8213-4103
h-index
h10-index
h5-index
2275
Citations
25
h-index
Calculated based on number of publications stored in Pure and citations from Scopus
830
Citations
16
h-index
Calculated based on number of publications stored in Pure and citations from Scopus
269
Citations
9
h-index
Calculated based on number of publications stored in Pure and citations from Scopus
1994 …
2024
Research activity per year
Overview
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Projects
(20)
Research output
(253)
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(6)
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Dive into the research topics where Pin Su is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Keyphrases
6T SRAM Cell
20%
Analytical Solution
15%
Antiferroelectric
11%
Carbon Nanotube Field Effect Transistor (CNTFET)
35%
Cell Stability
10%
Drain Current
10%
Electrostatic Integrity
14%
Ferroelectric Field-effect Transistor (FeFET)
26%
FET Devices
10%
Fin Field-effect Transistor (FinFET)
47%
FinFET Devices
16%
Germanium-on-insulator (GeOI)
34%
Heteromeric Channel
10%
Impact Ionization
9%
Induced Variability
10%
InGaAs
15%
Line Edge Roughness
17%
Logic Circuit
30%
Monolithic 3-D (M3-D)
13%
MOSFET
52%
Negative Capacitance
13%
NMOSFET
15%
Non-volatile Memory
11%
NWFET
10%
PMOSFET
24%
Process Variation
11%
Quantum Confinement
13%
Quantum Confinement Effect
9%
Random Telegraph Noise
12%
Read Static Noise Margin
12%
Self-heating
9%
Short Channel
15%
Short Channel Effects
10%
Silicon-on-insulator
12%
SOI MOSFET
16%
SRAM Cell
34%
Strained Devices
12%
Subthreshold
13%
Subthreshold SRAM
15%
Subthreshold Swing
14%
Temperature Effect
19%
TFET SRAMs
16%
Threshold Voltage
16%
Transition Metal Dichalcogenides
12%
Tri-gate
11%
Tunnel FET
17%
Ultra-thin Body
41%
Ultra-thin SOI
11%
Uniaxial
15%
Work Function Variation
17%
Engineering
Access Time
8%
Atomistic Simulation
7%
Axial Strain
13%
Body Effect
8%
Carrier Mobility
5%
Channel Length
6%
Circuit Design
5%
Circuit Simulation
9%
Current Drain
15%
Dielectrics
10%
Dopants
5%
Edge Roughness
22%
Electric Field
5%
Field Effect Transistor
49%
Field-Effect Transistor
17%
Fin Width
5%
Floating Body
7%
Frequency Noise
11%
Gate Bias
6%
Gate Dielectric
5%
Gate Length
10%
Gate Voltage
6%
Impact Ionization
9%
Indium Gallium Arsenide
25%
Interlayer
13%
Inverter
9%
Isolation Method
7%
Logic Circuit
27%
Lookup Table
5%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Mixed Mode
12%
Nanoscale
18%
Nanowire
5%
Noise Margin
22%
Nonvolatile Memory
10%
Operating Cell
5%
Process Variation
10%
Quantum Confinement
16%
Quantum Confinement Effect
11%
Radio Frequency
5%
Random Access Memory
8%
Random Variation
5%
Sense Amplifier
7%
Silicon on Insulator
16%
Simulation Result
6%
SPICE
7%
Temperature Dependence
14%
Tunnel
10%
Tunnel Construction
24%
